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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 523 Displaying: 381 - 400| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 381. | ACE9020NP1S | 3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems | MITEL | SSOP | 28 | -40°C | 85°C | 187K | | 382. | EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 225K | | 383. | EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO3PBL | 3 | -55°C | 150°C | 225K | | 384. | EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 225K | | 385. | EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3PBL | 3 | -55°C | 150°C | 225K | | 386. | HGT1S20N60B3S | 600V N-channel IGBT, 40A | FAIR | TO-263AB | 3 | -40°C | 150°C | 197K | | 387. | HGT1S20N60C3RS | TRANSISTOR IGBT | FAIR | - | - | - | - | 107K | | 388. | HGT1S20N60C3RS | TRANSISTOR IGBT | FAIR | - | - | - | - | 107K | | 389. | HGTP20N60B3 | TRANSISTOR IGBT TO-220 | FAIR | - | - | - | - | 138K | | 390. | HGTP20N60C3R | TRANSISTOR IGBT TO-262 | FAIR | - | - | - | - | 107K | | 391. | IC61C256AH-20NI | 20ns; 5V; 32K x 8; high-speed CMOS static RAM | ICSI | DIP | 28 | -40°C | 85°C | 97K | | 392. | M28F101-120N1 | Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 120ns Access (TSOP) | STM | TSOP | 32 | - | - | 197K | | 393. | MS62256H-20NC | 32K x 8 high speed cmos static RAM, 20ns | MOSEL | PDIP | 28 | 0°C | 70°C | 108K | | 394. | STD20N03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | STM | TO-252 | - | - | - | 105K | | 395. | STD20N06 | TRANSISTOR MOSFET TO-252 | STM | - | - | - | - | 174K | | 396. | TP2520N8 | 200V P-channel enhancement-mode vertical DMOS FET | SUTEX | TO-243AA | 3 | -55°C | 150°C | 456K | | 397. | VT20N1 | Photoconductive cell | PERK | - | 2 | -40°C | 75°C | 1M | | 398. | VT20N2 | Photoconductive cell | PERK | - | 2 | -40°C | 75°C | 1M | | 399. | VT20N3 | Photoconductive cell | PERK | - | 2 | -40°C | 75°C | 1M | | 400. | VT20N4 | Photoconductive cell | PERK | - | 2 | -40°C | 75°C | 1M |
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