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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 1185      Displaying: 641 - 660
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
641.
ACT-E128K32N-120F2QHigh speed 4 Megabit EEPROM multichip module. Speed 120ns.
ACT
CQFP
68
-55°C
125°C
171K
642.
ACT-F128K32N-120F5QHigh speed 4 Megabit FLASH multichip module. Speed 120ns.
ACT
CQFP
68
-55°C
125°C
201K
643.
ACT-F1M32B-120F14CHigh speed 32 Megabit boot block FLASH multichip module. Speed 120ns.
ACT
CQFP
68
0°C
70°C
149K
644.
ACT-F1M32B-120F14IHigh speed 32 Megabit boot block FLASH multichip module. Speed 120ns.
ACT
CQFP
68
-40°C
85°C
149K
645.
ACT-F1M32B-120F14MHigh speed 32 Megabit boot block FLASH multichip module. Speed 120ns.
ACT
CQFP
68
-55°C
125°C
149K
646.
ACT-F1M32B-120F14QHigh speed 32 Megabit boot block FLASH multichip module. Speed 120ns.
ACT
CQFP
68
-55°C
125°C
149K
647.
ACT-F2M32A-120F18CHigh speed 64 Megabit sector erase FLASH multichip module. Speed 120ns.
ACT
CQFP
68
0°C
70°C
92K
648.
ACT-F2M32A-120F18IHigh speed 64 Megabit sector erase FLASH multichip module. Speed 120ns.
ACT
CQFP
68
-40°C
85°C
92K
649.
ACT-F512K32N-120F5QHigh speed 16 Megabit FLASH multichip module. Speed 120 ns
ACT
CQFP
68
-55°C
125°C
238K
650.
ACT-F512K8N-120F6QHigh speed 4 Megabit monolithic FLASH. Speed 120 ns
ACT
Flat Pack
32
-55°C
125°C
149K
651.
ACT-F512K8N-120F7QHigh speed 4 Megabit monolithic FLASH. Speed 120 ns
ACT
Flat Pack (Formed)
32
-55°C
125°C
149K
652.
ACT-S512K8N-020F3QHigh speed 4 Megabit monolithic SRAM. Speed 20ns.
ACT
Flat
36
-55°C
125°C
83K
653.
ACT-S512K8N-020F4QHigh speed 4 Megabit monolithic SRAM. Speed 20ns.
ACT
CSOJ
36
-55°C
125°C
83K
654.
C10P20FR200 V, diode
NIHON
TO
3
-40°C
150°C
31K
655.
C10T20F-11A200 V, diode
NIHON
TO
3
-40°C
150°C
31K
656.
C16T20F-11A200 V, diode
NIHON
TO
3
-40°C
150°C
30K
657.
C25P20FR200 V, diode
NIHON
TO
3
-40°C
150°C
32K
658.
EM84520FP2-in-one scrolling mouse controller
EMC
DIP
16
0°C
70°C
120K
659.
IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
222K
660.
IRG4BC20FD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
222K
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