We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 2041. | 1N201G | General purpose plastic rectifier. Max repetitive peak reverse voltage Vrrm = 50 V. Max average forward rectified current I(av) = 2.0 A | CNEL | DO-15 | 2 | 50°C | 175°C | 141K |
| 2042. | FR201G | Glass passivated fast recovery rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 2.0 A. | BYTES | DO-15 | 2 | -65°C | 150°C | 153K |
| 2043. | GS832018T-133 | 133MHz 11ns 2M x 18 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 801K |
| 2044. | GS832018T-133I | 133MHz 11ns 1M x 36 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 801K |
| 2045. | GS832018T-150 | 150MHz 10ns 2M x 18 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 801K |
| 2046. | GS832018T-150I | 150MHz 10ns 1M x 36 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 801K |
| 2047. | GS832018T-166 | 166MHz 8.5ns 2M x 18 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 801K |
| 2048. | GS832018T-166I | 166MHz 8.5ns 1M x 36 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 801K |
| 2049. | GS832018T-200 | 200MHz 7.5ns 2M x 18 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 801K |
| 2050. | GS832018T-200I | 200MHz 7.5ns 1M x 36 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 801K |
| 2051. | GS832018T-225 | 225MHz 6.5ns 2M x 18 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 801K |
| 2052. | GS832018T-225I | 225MHz 6.5ns 1M x 36 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 801K |
| 2053. | GS832018T-250 | 250MHz 6ns 2M x 18 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 801K |
| 2054. | GS832018T-250I | 250MHz 6ns 1M x 36 36Mb synchronous burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 801K |
| 2055. | RL201G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 2.0 A. | BYTES | DO-15 | 2 | -65°C | 175°C | 151K |
| 2056. | RS201M | Single phase bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 2.0 A. | BYTES | RS-2M | 4 | -65°C | 150°C | 146K |
| 2057. | S2010DS2 | Sensitivities thyristor, 10 ampere, 200 volt | TECOR | TO-252 | 3 | -40°C | 110°C | 198K |
| 2058. | S2010DS3 | Sensitivities thyristor, 10 ampere, 200 volt | TECOR | TO-252 | 3 | -40°C | 110°C | 198K |
| 2059. | S2010VS2 | Sensitivities thyristor, 10 ampere, 200 volt | TECOR | TO-251 | 3 | -40°C | 110°C | 198K |
| 2060. | S2010VS3 | Sensitivities thyristor, 10 ampere, 200 volt | TECOR | TO-251 | 3 | -40°C | 110°C | 198K |
