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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 446 Displaying: 381 - 400| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 381. | AD5200BRM10-REEL7 | 7V; 256-position and 33-position digital potentiometer. For mechanical potentiometer replacement, instrumentation: gain, offset adjustment | AD | SOIC | 10 | -40°C | 85°C | 759K | | 382. | AD5200BRM50-REEL7 | 7V; 256-position and 33-position digital potentiometer. For mechanical potentiometer replacement, instrumentation: gain, offset adjustment | AD | SOIC | 10 | -40°C | 85°C | 759K | | 383. | BTA08-200B | Triac, 8A, 200V | STM | - | 3 | -40°C | 110°C | 189K | | 384. | BTA08-200BW | Snubberless triac, 8A, 200V | STM | - | 3 | -40°C | 125°C | 185K | | 385. | BTB08-200B | Triac, 8A, 200V | STM | - | 3 | -40°C | 110°C | 189K | | 386. | BUK436W-200B | 200 V, power MOS transistor | PHLPS | SOT | 3 | - | - | 54K | | 387. | BUK444-200B | 200 V, power MOS transistor | PHLPS | SOT | 3 | - | - | 59K | | 388. | BUK456-200B | 200 V, power MOS transistor | PHLPS | SOT | 3 | - | - | 50K | | 389. | BUK545-200B | 200 V, power MOS transistor | PHLPS | SOT | 3 | - | - | 56K | | 390. | BUK555-200B | 200 V, power MOS transistor | PHLPS | SOT | 3 | - | - | 55K | | 391. | CLP30-200B1 | OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE | STM | - | - | - | - | 138K | | 392. | CY7C1316V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | CYPR | FBGA | 165 | 0°C | 70°C | 442K | | 393. | CY7C1318V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | CYPR | FBGA | 165 | 0°C | 70°C | 442K | | 394. | CY7C1320V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | CYPR | FBGA | 165 | 0°C | 70°C | 442K | | 395. | IR8200B | 3A, 55V DMOS H-bridge | IRF | SIP | 11 | - | - | 87K | | 396. | PSMN070-200B | 200 V, N-channel trenchMOS transistor | PHLPS | SOT | 3 | -55°C | 175°C | 149K | | 397. | SMTBJ200B | SMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 200V. Peak pulse current Ipp = 100A (10/1000usec), 250A (8-20us expo). | LIFUS | - | 2 | 0°C | 150°C | 81K | | 398. | T10A200B | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K | | 399. | T10B200B | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 170V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs). | LIFUS | - | 2 | -40°C | 150°C | 70K | | 400. | WEDPND16M72S-200BC | 200MHz; 2.5V power supply; 16M x 72 DDR SDRAM | WHITE | PBGA | 219 | 0°C | 70°C | 442K |
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