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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 481. | BCX52-10 | PNP medium power transistor. | PHLPS | SOT89 | 3 | -65°C | 150°C | 58K |
| 482. | BCX52-10 | PNP medium power transistor. | PHLPS | SOT89 | 3 | -65°C | 150°C | 58K |
| 483. | BUK452-100B | PowerMOS transistor. Drain-source voltage 100 V. | PHLPS | TO220AB | 3 | 0°C | 175°C | 71K |
| 484. | BUK472-100A | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 6.6 A. | PHLPS | SOT186A | 3 | 0°C | 150°C | 76K |
| 485. | BUK472-100B | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 6.1 A. | PHLPS | SOT186A | 3 | 0°C | 150°C | 76K |
| 486. | BUK482-100A | PowerMOS transistor. | PHLPS | SOT223 | 4 | 0°C | 150°C | 68K |
| 487. | BUK482-100A | PowerMOS transistor. | PHLPS | SOT223 | 4 | 0°C | 150°C | 68K |
| 488. | BUK552-100A | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 10 A. | PHLPS | TO220AB | 3 | 0°C | 175°C | 71K |
| 489. | BUK562-100A | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 10 A. | PHLPS | SOT404 | 3 | 0°C | 175°C | 75K |
| 490. | BUK582-100A | PowerMOS transistor. Logic level FET. | PHLPS | SOT223 | 4 | 0°C | 150°C | 70K |
| 491. | G5852-103 | Reverse voltage:2V; spectral response range:0.9-2.1um; InGaAs PIN photodiode: long wavelength type (up to 2.1um). For NIR (near infrared) photometry, gas analyzer, water content analyzer | HAMAM | TO-5 | 3 | -40°C | 85°C | 255K |
| 492. | H7732-10 | Input voltage: 11.5-15.5V; max input current:40mA; compact side-on PMT: photosensor module | HAMAM | - | - | 5°C | 45°C | 86K |
| 493. | IMT200-72-10 | Input voltage 50-72-100 VDC;output voltage 10 VDC;output current:20 mA; 200-480 W full brick DC to DC converter | FRAN | - | 9 | -10°C | 70°C | 62K |
| 494. | P7152-10 | Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection | HAMAM | - | - | 0°C | 40°C | 103K |
| 495. | P722-10R | 200Vdc; 300mW; CdS photoconductive cell: resin coating type. Standard type designed to withstand high voltage and high power | HAMAM | - | 2 | -30°C | 50°C | 114K |
| 496. | P7752-10 | Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection | HAMAM | - | - | 0°C | 40°C | 103K |
| 497. | SMV1412-10 | 250mW; silicon hyperabrupt tuning diode | KNOX | SOT23 | - | -55°C | 125°C | 37K |
| 498. | SMV20412-10 | 2.5V; 250mW; surface mount 2042/2041 series varactor hyperabrupt tuning diode | KNOX | SOT23 | - | -55°C | 125°C | 36K |
| 499. | SMV20422-10 | 2.5V; 250mW; surface mount 2042/2041 series varactor hyperabrupt tuning diode | KNOX | SOT23 | - | -55°C | 125°C | 36K |
| 500. | SMV20432-10 | VBR:15V min; 250mW; surface mount 2043 series hyperabrupt tuning diode | KNOX | SOT23 | - | -55°C | 125°C | 35K |
