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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 561. | 1N5375B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 82V, Izt =15mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 562. | 1N5376B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 87V, Izt =15mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 563. | 1N5377B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 91V, Izt =15mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 564. | 1N5378B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 100V, Izt =12mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 565. | 1N5379B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 110V, Izt =12mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 566. | 1N5380B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 120V, Izt =10mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 567. | 1N5381B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 130V, Izt =10mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 568. | 1N5382B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 140V, Izt = 8.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 569. | 1N5383B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 150V, Izt = 8.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 570. | 1N5383B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 150V, Izt = 8.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 571. | 1N5383B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 150V, Izt = 8.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 572. | 1N5384B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 160V, Izt = 8.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 573. | 1N5384B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 160V, Izt = 8.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 574. | 1N5385B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 170V, Izt = 8.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 575. | 1N5386B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 180V, Izt = 5.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 576. | 1N5387B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 190V, Izt = 5.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 577. | 1N5388B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 200V, Izt = 5.0mA | PAJIT | DO-201AE | 2 | -55°C | 150°C | 306K |
| 578. | 1N5391 | Plastic silicon rectifier. Max reccurent peak reverse voltage 50V. Max average forward rectified current 1.5A. | PAJIT | D0-15 | 2 | -55°C | 150°C | 47K |
| 579. | 1N5392 | Plastic silicon rectifier. Max reccurent peak reverse voltage 100V. Max average forward rectified current 1.5A. | PAJIT | D0-15 | 2 | -55°C | 150°C | 47K |
| 580. | 1N5393 | Plastic silicon rectifier. Max reccurent peak reverse voltage 200V. Max average forward rectified current 1.5A. | PAJIT | D0-15 | 2 | -55°C | 150°C | 47K |
