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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 161. | 1N4447 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 47K |
| 162. | 1N4447 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-34 | 2 | -65°C | 175°C | 47K |
| 163. | 1N4448 | Small signal switching diode. Reverse voltage 75 V. Average rectified current 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 190K |
| 164. | 1N4448 | 100V; fast switching diode. General purpose rectification | DIODS | DO-35 | 2 | -65°C | 200°C | 57K |
| 165. | 1N4448 | 100 V, high-speed switching diode | FORMO | - | 2 | - | - | 323K |
| 166. | 1N4448W | 100V; fast switching surface mount diode. For general purpose switching applications | DIODS | SOD-123 | 2 | -65°C | 150°C | 73K |
| 167. | 1N4448W | Surface mount switching diode. Peak reverse voltage 100V. Maximum average forward current at Ta = 25degC.150mA | PAJIT | SOD-123 | 2 | -55°C | 125°C | 53K |
| 168. | 1N4448W | 100 V, fast switching surface mount diode | TRSYS | SOD-123 | 2 | -65°C | 150°C | 111K |
| 169. | 1N4448WS | Surface mount switching diode. Voltage 75V. Power 200mW. Peak reverse voltage 100V. | PAJIT | SOD-323 | 2 | -55°C | 125°C | 127K |
| 170. | 1N4449 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 47K |
| 171. | 1N4449 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-34 | 2 | -65°C | 175°C | 47K |
| 172. | 1N4450 | Small signal switching diode. Peak reverse voltage VRM = 40 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 47K |
| 173. | 1N4450 | 40 V, 150 mA, Silicon epitaxial planar diode | GODAR | DO-35 | 2 | - | - | 23K |
| 174. | 1N4451 | Small signal switching diode. Peak reverse voltage VRM = 40 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 47K |
| 175. | 1N4451 | 40 V, 150 mA, Silicon epitaxial planar diode | GODAR | DO-35 | 2 | - | - | 23K |
| 176. | 1N4453 | Small signal switching diode. Peak reverse voltage VRM = 30 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 47K |
| 177. | 1N4453 | 30 V, 150 mA, Silicon epitaxial planar diode | GODAR | DO-35 | 2 | - | - | 23K |
| 178. | 1N4454 | Small signal switching diode. Peak reverse voltage VRM = 75 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 47K |
| 179. | 1N4454 | 75V; silicon switching diode. For general purpose switching applications | DIODS | DO-35 | 2 | -65°C | 175°C | 49K |
| 180. | 1N4454 | 75 V, 150 mA, Silicon epitaxial planar diode | GODAR | DO-35 | 2 | - | - | 23K |
