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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 280      Displaying: 221 - 240
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
221.
1N6010B500 milliwatts glass silicon zener diode, zener voltage 27V
MOT
DO-204AH
2
-65°C
200°C
424K
222.
1N6015B500 milliwatts glass silicon zener diode, zener voltage 43V
MOT
DO-204AH
2
-65°C
200°C
424K
223.
1N6023B500 milliwatts glass silicon zener diode, zener voltage 91V
MOT
DO-204AH
2
-65°C
200°C
424K
224.
1N6025B500 milliwatts glass silicon zener diode, zener voltage 110V
MOT
DO-204AH
2
-65°C
200°C
424K
225.
1N6025B500 milliwatts glass silicon zener diode, zener voltage 110V
MOT
DO-204AH
2
-65°C
200°C
424K
226.
1N6098Schottky Rectifier
MSEMI
DO-5
-
-
-
120K
227.
1N60AGermanium Diode
MSEMI
DO-7
-
-
-
57K
228.
IXGH31N60600V ultra low V IGBT
IXYS
TO-247
3
-55°C
150°C
55K
229.
IXGH31N60600V ultra low V IGBT
IXYS
TO-247
3
-55°C
150°C
55K
230.
IXGH31N60D1600V HiPerFET power MOSFET
IXYS
TO-247
3
-55°C
150°C
53K
231.
IXGH41N60600V ultra-low voltage IGBT
IXYS
TO-247
3
-55°C
150°C
34K
232.
IXGT31N60600V ultra low V IGBT
IXYS
TO-247
3
-55°C
150°C
55K
233.
IXGT31N60D1600V HiPerFET power MOSFET
IXYS
TO-268
3
-55°C
150°C
53K
234.
MGP11N60EInsulated gate bipolar transistor
MOT
-
3
-55°C
150°C
123K
235.
MGW21N60EDInsulated gate bipolar transistor
MOT
TO-247AE
3
-55°C
150°C
152K
236.
MTD1N60ETMOS E-FET power field effect transistor D2PAK for surface mount
MOT
DPAK
4
-55°C
150°C
266K
237.
MTP1N60ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
232K
238.
OM11N60SA600V, 11 Amp, N-channel MOSFET
OMNI
TO-254AA
3
-55°C
150°C
29K
239.
R3111N601A-TRLow voltage detector. Detector threshold (-Vdet) 6.0V. Output type: Nch open drain. Standard taping specification TR
RICOH
SOT-23
5
-40°C
85°C
205K
240.
R3111N601C-TRLow voltage detector. Detector threshold (-Vdet) 6.0V. Output type: CMOS. Standard taping specification TR
RICOH
SOT-23
5
-40°C
85°C
205K
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