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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 399 Displaying: 381 - 399| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 381. | 1N5400 | 50 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K | | 382. | 1N5400G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. | JGD | - | 2 | -65°C | 150°C | 128K | | 383. | 1N5401 | 100 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K | | 384. | 1N5401G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. | JGD | - | 2 | -65°C | 150°C | 128K | | 385. | 1N5402 | 200 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K | | 386. | 1N5402G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. | JGD | - | 2 | -65°C | 150°C | 128K | | 387. | 1N5403 | 300 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K | | 388. | 1N5404 | 400 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K | | 389. | 1N5404G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. | JGD | - | 2 | -65°C | 150°C | 128K | | 390. | 1N5405 | 500 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K | | 391. | 1N5406 | 600 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K | | 392. | 1N5406G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. | JGD | - | 2 | -65°C | 150°C | 128K | | 393. | 1N5407 | 800 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K | | 394. | 1N5407G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. | JGD | - | 2 | -65°C | 150°C | 128K | | 395. | 1N5408 | 1000 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K | | 396. | 1N5408G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. | JGD | - | 2 | -65°C | 150°C | 128K | | 397. | 1N5474 | Capacitance:68.0pF; 400mW; general purpose abrupt varactor diode | KNOX | DO-7 | - | -65°C | 175°C | 37K | | 398. | 1N5475 | Capacitance:82.0pF; 400mW; general purpose abrupt varactor diode | KNOX | DO-7 | - | -65°C | 175°C | 37K | | 399. | 1N5476 | Capacitance:100.0pF; 400mW; general purpose abrupt varactor diode | KNOX | DO-7 | - | -65°C | 175°C | 37K |
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