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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 401. | GS8170DD18C-250 | 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 825K |
| 402. | GS8170DD18C-250I | 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 403. | GS8170DD18C-300 | 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 825K |
| 404. | GS8170DD18C-300I | 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 405. | GS8170DD18C-333 | 333MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 825K |
| 406. | GS8170DD18C-333I | 333MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 407. | GS8170DW18C-250 | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 906K |
| 408. | GS8170DW18C-250I | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 409. | GS8170DW18C-300 | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 906K |
| 410. | GS8170DW18C-300I | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 411. | GS8170DW18C-333 | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 906K |
| 412. | GS8170DW18C-333I | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 413. | GS8170LW18C-250 | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 414. | GS8170LW18C-250I | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 415. | GS8170LW18C-300 | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 416. | GS8170LW18C-300I | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 417. | GS8170LW18C-333 | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 418. | GS8170LW18C-333I | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 419. | PEEL18CV8P-10 | CMOS programmable electrically erasable logic device, 10 ns | ICT | DIP | 20 | 0°C | 70°C | 397K |
| 420. | PEEL18CV8P-7 | CMOS programmable electrically erasable logic device, 7.5 ns | ICT | DIP | 20 | 0°C | 70°C | 397K |
