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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 101. | 1EZ170D5 | 1 watt silicon zener diode. Nominal zener voltage 170V at 1.5mA. | JGD | - | 2 | -65°C | 175°C | 109K |
| 102. | 1EZ170D5 | Pd=1.0W, Vz=170V zener diode | MCC | - | - | - | - | 86K |
| 103. | 3EZ170D | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-20% tolerance. | JGD | - | 2 | -65°C | 175°C | 146K |
| 104. | 3EZ170D1 | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-1% tolerance. | JGD | - | 2 | -65°C | 175°C | 146K |
| 105. | FGL60N170D | IGBT | FAIR | - | - | - | - | 558K |
| 106. | GS8170DW18C-250 | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 906K |
| 107. | GS8170DW18C-250I | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 108. | GS8170DW18C-300 | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 906K |
| 109. | GS8170DW18C-300I | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 110. | GS8170DW18C-333 | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 906K |
| 111. | GS8170DW18C-333I | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 112. | GS8170DW36C-250 | 250MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 113. | GS8170DW36C-250I | 250MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 114. | GS8170DW36C-300 | 300MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 115. | GS8170DW36C-300I | 300MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 116. | GS8170DW36C-333 | 333MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 117. | GS8170DW36C-333I | 333MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 118. | GS8170DW72C-250I | 250MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 119. | GS8170DW72C-300I | 300MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 120. | GS8170DW72C-333I | 333MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
