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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | 1514-170D | Delay 170 +/-8.5 ns, fixed SIP delay line Td/Tr=5 | DADD | SIP | 7 | -55°C | 125°C | 32K |
| 82. | 2EZ170D5 | 170 V, 2 W, silicon zener diode | EIC | - | 2 | -55°C | 175°C | 27K |
| 83. | 3EZ170D5 | 170 V, 3 W, silicon zener diode | EIC | - | 2 | -55°C | 175°C | 37K |
| 84. | A170D | 400V, 100A general purpose single diode | PWRX | - | - | - | - | 385K |
| 85. | GS8170DD18C-250 | 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 825K |
| 86. | GS8170DD18C-250I | 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 87. | GS8170DD18C-300 | 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 825K |
| 88. | GS8170DD18C-300I | 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 89. | GS8170DD18C-333 | 333MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 825K |
| 90. | GS8170DD18C-333I | 333MHz 1M x 18 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 91. | GS8170DD36C-250 | 250MHz 512K x 36 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 92. | GS8170DD36C-250I | 250MHz 512K x 36 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 93. | GS8170DD36C-300 | 300MHz 512K x 36 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 94. | GS8170DD36C-300I | 300MHz 512K x 36 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 95. | GS8170DD36C-333 | 333MHz 512K x 36 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 96. | GS8170DD36C-333I | 333MHz 512K x 36 18MB double data rate sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 825K |
| 97. | GS8170DW72C-250 | 250MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 98. | GS8170DW72C-300 | 300MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 99. | GS8170DW72C-333 | 333MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 100. | R1170D401B-TR | 800mA LDO regulator. Output voltage 4.0V. Built-in chip enable circuit, active at H. Taping type TR. | RICOH | HSON-6P | 6 | -40°C | 85°C | 261K |
