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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1041. | FR1603 | Fast recovery rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 16.0 A. | BYTES | TO-220 | 3 | -65°C | 150°C | 160K |
| 1042. | GS816136T-150 | 7.5ns 150MHz 512K x 36 pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 1M |
| 1043. | GS816136T-166 | 7ns 166MHz 512K x 36 pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 1M |
| 1044. | GS816136T-200 | 6.5ns 200MHz 512K x 36 pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 1M |
| 1045. | GS816136T-225 | 6ns 200MHz 512K x 36 pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 1M |
| 1046. | GS816136T-250 | 5.5ns 250MHz 512K x 36 pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 1M |
| 1047. | GS816136T-250 | 5.5ns 250MHz 512K x 36 pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 1M |
| 1048. | GS816236B-133 | 8.5ns 133MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | 0°C | 70°C | 956K |
| 1049. | GS816236B-133I | 8.5ns 133MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 956K |
| 1050. | GS816236B-150 | 7.5ns 150MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | 0°C | 70°C | 956K |
| 1051. | GS816236B-150I | 7.5ns 150MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 956K |
| 1052. | GS816236B-166 | 7ns 166MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | 0°C | 70°C | 956K |
| 1053. | GS816236B-166I | 7ns 166MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 956K |
| 1054. | GS816236B-200 | 6.5ns 200MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | 0°C | 70°C | 956K |
| 1055. | GS816236B-200I | 6.5ns 200MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 956K |
| 1056. | GS816236B-225 | 6ns 225MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | 0°C | 70°C | 956K |
| 1057. | GS816236B-225I | 6ns 225MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 956K |
| 1058. | GS816236B-250 | 5.5ns 250MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | 0°C | 70°C | 956K |
| 1059. | GS816236B-250I | 5.5ns 250MHz 512K x 36 18MB S/DCD synchronous burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 956K |
| 1060. | HER1603C | High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 16.0 A. | BYTES | TO-220 | 3 | -55°C | 150°C | 161K |
