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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 161. | 50S116T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | CRMT | TSOP | 50 | 0°C | 70°C | 1M |
| 162. | 50S116T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | CRMT | TSOP | 50 | 0°C | 70°C | 1M |
| 163. | 50S116T-7 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA | CRMT | TSOP | 50 | 0°C | 70°C | 1M |
| 164. | 54S416T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | CRMT | TSOP | 54 | 0°C | 70°C | 1M |
| 165. | 54S416T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | CRMT | TSOP | 54 | 0°C | 70°C | 1M |
| 166. | 54S416T-7 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA | CRMT | TSOP | 54 | 0°C | 70°C | 1M |
| 167. | GS71116TP-10I | 10ns 64K x 16 1Mb asynchronous SRAM | GSITE | TSOP | 44 | -40°C | 85°C | 220K |
| 168. | GS71116TP-12 | 12ns 64K x 16 1Mb asynchronous SRAM | GSITE | TSOP | 44 | 0°C | 70°C | 220K |
| 169. | GS71116TP-12I | 12ns 64K x 16 1Mb asynchronous SRAM | GSITE | TSOP | 44 | -40°C | 85°C | 220K |
| 170. | GS71116TP-15 | 15ns 64K x 16 1Mb asynchronous SRAM | GSITE | TSOP | 44 | 0°C | 70°C | 220K |
| 171. | GS71116TP-15I | 15ns 64K x 16 1Mb asynchronous SRAM | GSITE | TSOP | 44 | -40°C | 85°C | 220K |
| 172. | GS71216TP-10 | 10ns 64K x 16 1Mb asynchronous SRAM | GSITE | TSOP | 44 | 0°C | 70°C | 182K |
| 173. | GS71216TP-10I | 10ns 64K x 16 1Mb asynchronous SRAM | GSITE | TSOP | 44 | -40°C | 85°C | 182K |
| 174. | GS71216TP-8 | 8ns 64K x 16 1Mb asynchronous SRAM | GSITE | TSOP | 44 | 0°C | 70°C | 182K |
| 175. | GS71216TP-8I | 8ns 64K x 16 1Mb asynchronous SRAM | GSITE | TSOP | 44 | -40°C | 85°C | 182K |
| 176. | GS72116TP-12 | 12ns 128K x 16 2Mb asynchronous SRAM | GSITE | TSOP | 44 | 0°C | 70°C | 269K |
| 177. | GS72116TP-12 | 12ns 128K x 16 2Mb asynchronous SRAM | GSITE | TSOP | 44 | 0°C | 70°C | 269K |
| 178. | GS72116TP-8 | 8ns 128K x 16 2Mb asynchronous SRAM | GSITE | TSOP | 44 | 0°C | 70°C | 269K |
| 179. | MT46V32M16TG-8 | 8Meg x 16 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 2M |
| 180. | MT46V32M16TG-8L | 8Meg x 16 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 2M |
