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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 2001. | BS616LV2015AC | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 233K |
| 2002. | BS616LV2015AI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 233K |
| 2003. | BS616LV2015DC | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | DICE | 48 | 0°C | 70°C | 233K |
| 2004. | BS616LV2015DI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | DICE | 48 | -40°C | 85°C | 233K |
| 2005. | BS616LV2015EC | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 44 | 0°C | 70°C | 233K |
| 2006. | BS616LV2015EI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 44 | -40°C | 85°C | 233K |
| 2007. | BS616LV2015TC | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 48 | 0°C | 70°C | 233K |
| 2008. | BS616LV2015TI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 48 | -40°C | 85°C | 233K |
| 2009. | BS616LV2018AC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 220K |
| 2010. | BS616LV2018AI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 220K |
| 2011. | BS616LV2018DC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | DICE | 48 | 0°C | 70°C | 220K |
| 2012. | BS616LV2018DI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | DICE | 48 | -40°C | 85°C | 220K |
| 2013. | BS616LV2018TC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 48 | 0°C | 70°C | 220K |
| 2014. | BS616LV2018TI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 48 | -40°C | 85°C | 220K |
| 2015. | BS616LV2021AC | 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 254K |
| 2016. | BS616LV2021AI | 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | BGA | 48 | 0°C | 85°C | 254K |
| 2017. | BS616LV2021DC | 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | 0°C | 70°C | 254K |
| 2018. | BS616LV2021DI | 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | 0°C | 85°C | 254K |
| 2019. | BS616LV2023DC | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | 0°C | 70°C | 249K |
| 2020. | BS616LV2023DI | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | -40°C | 85°C | 249K |
