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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 173 Displaying: 121 - 140| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 121. | A67L8316E-4 | Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM | AMIC | LQFP | 100 | 0°C | 70°C | 380K | | 122. | A67L8316E-4.2 | Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM | AMIC | LQFP | 100 | 0°C | 70°C | 380K | | 123. | A67L8316E-4.5 | Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM | AMIC | LQFP | 100 | 0°C | 70°C | 380K | | 124. | A67L8316E-4.5 | Cycle time:8.5ns;accesstime:4.5ns 256K x 16 LVTTL, pipelined DBA SRAM | AMICC | LQFP | 100 | 0°C | 70°C | 272K | | 125. | A67L8316E-5 | Cycle time:7ns; access time:5ns; 256K x 16 LVTTL, pipelined DBA SRAM | AMIC | LQFP | 100 | 0°C | 70°C | 380K | | 126. | A67L8316E-5 | Cycle time:10ns;accesstime:5ns 256K x 16 LVTTL, pipelined DBA SRAM | AMICC | LQFP | 100 | 0°C | 70°C | 272K | | 127. | A67L8316E-6 | Cycle time:12ns;accesstime:6ns 256K x 16 LVTTL, pipelined DBA SRAM | AMICC | LQFP | 100 | 0°C | 70°C | 272K | | 128. | ispLSI1016EA-100LJ44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | LATIC | PLCC | 44 | 0°C | 70°C | 162K | | 129. | ispLSI1016EA-100LT44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | LATIC | TQFP | 44 | 0°C | 70°C | 162K | | 130. | ispLSI1016EA-125LJ44 | In-system programmable high density PLD, 125 MHz, 7.5ns, low power | LATIC | PLCC | 44 | 0°C | 70°C | 162K | | 131. | ispLSI1016EA-200LJ44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | LATIC | PLCC | 44 | 0°C | 70°C | 162K | | 132. | ispLSI1016EA-200LT44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | LATIC | TQFP | 44 | 0°C | 70°C | 162K | | 133. | L-516EIR3C | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 60K | | 134. | L-516EIR3D2 | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 60K | | 135. | MT4C1M16E5DJ-5 | 1Meg x 16, 3.3V EDO DRAM | MICRN | SOJ | 42 | 0°C | 70°C | 385K | | 136. | MT4C1M16E5DJ-5S | 1Meg x 16, 3.3V EDO DRAM | MICRN | SOJ | 42 | 0°C | 70°C | 385K | | 137. | MT4C1M16E5DJ-6 | 1Meg x 16, 3.3V EDO DRAM | MICRN | SOJ | 42 | 0°C | 70°C | 385K | | 138. | MT4LC1M16E5DJ-5S | 1Meg x 16, 3.3V EDO DRAM | MICRN | SOJ | 42 | 0°C | 70°C | 385K | | 139. | MT4LC1M16E5DJ-6 | 1Meg x 16, 3.3V EDO DRAM | MICRN | SOJ | 42 | 0°C | 70°C | 385K | | 140. | MT4LC1M16E5DJ-6S | 1Meg x 16, 3.3V EDO DRAM | MICRN | SOJ | 42 | 0°C | 70°C | 385K |
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