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Found: 310      Displaying: 181 - 200
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
181.
SB1640Reverse voltage: 40.00V; 16A D2PAK surface mount schottky barrier rectifier
WTE
TO-220A
2
-65°C
150°C
48K
182.
SB1640Reverse voltage: 40.00V; 16A D2PAK surface mount schottky barrier rectifier
WTE
TO-220A
2
-65°C
150°C
48K
183.
SB1640CTSchottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 90degC 16.0 A.
PAJIT
-
3
-50°C
125°C
57K
184.
SB1640CTReverse voltage: 40.00V; 16A schottky barrier rectifier
WTE
TO-220
3
-65°C
150°C
39K
185.
SB1640CTReverse voltage: 40.00V; 16A schottky barrier rectifier
WTE
TO-220
3
-65°C
150°C
39K
186.
SB1640DCDDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 90degC 16.0 A.
PAJIT
TO-263
3
-50°C
150°C
56K
187.
SB1640DC-T3Reverse voltage: 40.00V; 16A D2PAK surface mount schottky barrier rectifier
WTE
DPAK
3
-50°C
150°C
44K
188.
SB1640DC-T3Reverse voltage: 40.00V; 16A D2PAK surface mount schottky barrier rectifier
WTE
DPAK
3
-50°C
150°C
44K
189.
SB1640FCTReverse voltage: 40.00V; 16A D2PAK surface mount schottky barrier rectifier
WTE
TO-220
3
-65°C
150°C
41K
190.
SBL1640PT40V, 16A schottky barrier rectifier
LITON
TO-3P
3
-55°C
125°C
38K
191.
V53C316405A-50K3.3 V, 4M x 4 EDO page mode CMOS dynamic RAM, TTL interface, 50ns
MOSEL
SOJ
24
0°C
70°C
171K
192.
V53C316405A-50K3.3 V, 4M x 4 EDO page mode CMOS dynamic RAM, TTL interface, 50ns
MOSEL
SOJ
24
0°C
70°C
171K
193.
V53C316405A-50T3.3 V, 4M x 4 EDO page mode CMOS dynamic RAM, TTL interface, 50ns
MOSEL
TSOP ll
26
0°C
70°C
171K
194.
V53C316405A-60K3.3 V, 4M x 4 EDO page mode CMOS dynamic RAM, TTL interface, 60ns
MOSEL
SOJ
24
0°C
70°C
171K
195.
V53C316405A-60T3.3 V, 4M x 4 EDO page mode CMOS dynamic RAM, TTL interface, 60ns
MOSEL
TSOP ll
26
0°C
70°C
171K
196.
V62C18164096L-100B256K x 16, CMOS STATIC RAM, low power, 100ns, operating voltage =1.8V – 2.3V
MOSEL
BGA
48
0°C
70°C
51K
197.
V62C18164096L-100BI256K x 16, CMOS STATIC RAM, low power, 100ns, operating voltage =1.8V – 2.3V
MOSEL
BGA
48
-40°C
85°C
51K
198.
V62C18164096L-85B256K x 16, CMOS STATIC RAM, low power, 85ns, operating voltage =1.8V – 2.3V
MOSEL
BGA
48
0°C
70°C
51K
199.
V62C18164096L-85BI256K x 16, CMOS STATIC RAM, low power, 85ns, operating voltage =1.8V – 2.3V
MOSEL
BGA
48
-40°C
85°C
51K
200.
V62C18164096LL-100B256K x 16, CMOS STATIC RAM, double low power, 100ns, operating voltage =1.8V – 2.3V
MOSEL
BGA
48
0°C
70°C
51K
201.
V62C18164096LL-85B256K x 16, CMOS STATIC RAM, double low power, 100ns, operating voltage =1.8V – 2.3V
MOSEL
BGA
48
0°C
70°C
51K
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