We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
181. | BS616UV1620BC | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 215K |
182. | BS616UV1620BI | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable | BSI | BGA | 48 | -40°C | 85°C | 215K |
183. | BS616UV1620FC | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 215K |
184. | BS616UV1620FI | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable | BSI | BGA | 48 | -40°C | 85°C | 215K |
185. | HY57V651620BTC-55 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 183MHz | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
186. | HY57V651620BTC-6 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 166MHz | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
187. | HY57V651620BTC-7 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 143MHz | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
188. | HY57V651620BTC-75 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 133MHz | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
189. | HY57V651620BTC-8 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 125MHz | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
190. | MURB1620CT | 200V; 16A surface mount super-fast rectifier | DIODS | - | 3 | -65°C | 150°C | 64K |
191. | SB1620 | 20 V, 16 A, schottky barrier rectifier | TRSYS | TO | 3 | -50°C | 125°C | 147K |
192. | SB1620C | Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 16 A. | SSE | TO-220 | 3 | -65°C | 125°C | 22K |
193. | SB1620DC | 20 V, 16 A, D2PAK surface mount schottky barrier rectifier | TRSYS | TO-263 | 3 | -50°C | 150°C | 148K |
194. | SB1620F | 20 V, 16 A, isolation schottky barrier rectifier | TRSYS | TO | 3 | -50°C | 150°C | 148K |
195. | SR1620 | Schottky barrier rectifier. Common cathoode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 16.0 A. | CNEL | - | 3 | -65°C | 125°C | 145K |
196. | SR1620A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 16.0 A. | CNEL | - | 3 | -65°C | 125°C | 145K |
197. | SR1620C | Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 60 V. Maximum average forward rectified current 16 A. | BYTES | TO-220 | 3 | -65°C | 125°C | 172K |
198. | SRF1620 | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 16.0 A. | CNEL | ITO-220AB | 3 | -65°C | 125°C | 138K |
199. | SRF1620A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 16.0 A. | CNEL | ITO-220AB | 3 | -65°C | 125°C | 138K |
200. | STPRF1620CT | 200V; 16A super-fast glass passivated rectifier | DIODS | - | 3 | -65°C | 150°C | 65K |