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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
321. | 1503-160B | Max delay 160 ns, Mechanically variable delay line | DADD | - | 4 | - | - | 49K |
322. | B160B | 60V, 1.0A surface mount schottky barrier rectifier | LITON | SMB | 2 | -55°C | 125°C | 36K |
323. | M5M29GB160BVP | 16777216-bit CMOS 3.3V-only, block erase flash memory | MITS | TSOP | 48 | -20°C | 85°C | 197K |
324. | M5M29GB160BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | MITS | - | 48 | -20°C | 85°C | 197K |
325. | M5M29GB160BWG | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | MITS | CSP | 48 | -20°C | 85°C | 200K |
326. | M5M29GT160BVP | 16777216-bit CMOS 3.3V-only, block erase flash memory | MITS | TSOP | 48 | -20°C | 85°C | 197K |
327. | M5M29GT160BVP-80 | 16777216-bit CMOS 3.3V-only, block erase flash memory | MITS | TSOP | 48 | -20°C | 85°C | 229K |
328. | M5M29GT160BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | MITS | - | 48 | -20°C | 85°C | 197K |
329. | M5M29GT160BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | MITS | - | 48 | -20°C | 85°C | 197K |
330. | M5M29GT160BWG | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | MITS | CSP | 48 | -20°C | 85°C | 200K |
331. | M5M465160BTP-6S | Fast page mode 67108864-bit dynamic DRAM | MITS | TSOP | 32 | 0°C | 70°C | 362K |
332. | MC68160BFB | Enhanced ethernet transceiver | MOT | TQFP | 52 | -40°C | 85°C | 372K |
333. | MT9160BE | 0.3-7V; 20mA; multi-featured codec. For pair gain, voice mail systems, wireless set base stations | MITEL | DIP | 24 | -40°C | 85°C | 13K |
334. | MT9160BN | 5.0V; multi-featured codec (MFC). For digital telephone sets, cellular radio sets | MITEL | SSOP | 20 | -40°C | 85°C | 154K |
335. | MT9160BS | 0.3-7V; 20mA; multi-featured codec. For pair gain, voice mail systems, wireless set base stations | MITEL | SOIC | 20 | -40°C | 85°C | 13K |
336. | T224160B | 4.5 to 5.5V; 1.2W; 256K x 16 dynamic RAM: fast page mode | TMT | SOJ | 40 | 0°C | 70°C | 131K |
337. | T224160B | 4.5 to 5.5V; 1.2W; 256K x 16 dynamic RAM: fast page mode | TMT | TSOP | 40 | 0°C | 70°C | 131K |
338. | T224160B | 4.5 to 5.5V; 1.2W; 256K x 16 dynamic RAM: fast page mode | TMT | TSOP | 40 | 0°C | 70°C | 131K |
339. | T224160B | 4.5 to 5.5V; 1.2W; 256K x 16 dynamic RAM: fast page mode | TMT | SOJ | 40 | 0°C | 70°C | 131K |
340. | TSP160B | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 160V. Breakover voltage 220V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-15 | 2 | -40°C | 65°C | 117K |
341. | V1000LA160B | 1000V varistor | LIFUS | - | 2 | -55°C | 85°C | 396K |