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Found: 633      Displaying: 581 - 600
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
581.
1415312Bobbin type inductor. Inductance (+-10% at 1kHz) 15uH.
CANDD
-
2
-40°C
85°C
91K
582.
1415440Bobbin type inductor. Inductance (+-10% at 1kHz) 150uH.
CANDD
-
2
-40°C
85°C
91K
583.
1415449Bobbin type inductor. Inductance (+-10% at 1kHz) 150uH.
CANDD
-
2
-40°C
85°C
91K
584.
1415465Bobbin type inductor. Inductance (+-10% at 1kHz) 150uH.
CANDD
-
2
-40°C
85°C
91K
585.
1415513Bobbin type inductor. Inductance (+-10% at 1kHz) 1.5mH.
CANDD
-
2
-40°C
85°C
91K
586.
1415514Bobbin type inductor. Inductance (+-10% at 1kHz) 1.5mH.
CANDD
-
2
-40°C
85°C
91K
587.
1415517Bobbin type inductor. Inductance (+-10% at 1kHz) 1.5mH.
CANDD
-
2
-40°C
85°C
91K
588.
1415604Bobbin type inductor. Inductance (+-10% at 1kHz) 15mH.
CANDD
-
2
-40°C
85°C
91K
589.
1415605Bobbin type inductor. Inductance (+-10% at 1kHz) 15mH.
CANDD
-
2
-40°C
85°C
91K
590.
BUK7514-55TrenchMOS transistor. Standard level FET.
PHLPS
TO220AB
3
-55°C
175°C
64K
591.
BUK7614-55TrenchMOS transistor. Standard level FET.
PHLPS
SOT404
3
-55°C
175°C
68K
592.
BUK7614-55TrenchMOS transistor. Standard level FET.
PHLPS
SOT404
3
-55°C
175°C
68K
593.
BUK9514-55TrenchMOS transistor. Logic level FET.
PHLPS
TO220AB
3
-55°C
175°C
65K
594.
BUK9514-55TrenchMOS transistor. Logic level FET.
PHLPS
TO220AB
3
-55°C
175°C
65K
595.
G9214-512SNumber of pixels:512; supply voltage:5.0V; clock pulse voltage: 5.5V; InGaAs linear near infrared (0.9 to 1.67um / 2.55um) image sensor
HAMAM
-
-
-
-
133K
596.
KSV1405400mW; measured from 1000-3000Hz; silicon hyperrabrupt tuning diode
KNOX
DO-7
-
-55°C
150°C
35K
597.
P1445100Vdc; 30mW; CdS photoconductive cell: standard type designed for general purpose, wide application
HAMAM
-
2
-30°C
50°C
116K
598.
SMV1405-01250mW; silicon hyperabrupt tuning diode
KNOX
SOT23
-
-55°C
125°C
37K
599.
SMV1405-09250mW; silicon hyperabrupt tuning diode
KNOX
SOT23
-
-55°C
125°C
37K
600.
SMV1405-15250mW; silicon hyperabrupt tuning diode
KNOX
SOT23
-
-55°C
125°C
37K
601.
TMV1405Diode capacitance:200-300pF; VBR:12V min; 280mW; silicon hihg ratio plastic thru hole varactor
KNOX
-
-
-55°C
125°C
34K
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