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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 821. | 2SA1290 | PNP transistor 60V/7A for high-speed switching applications | SANYO | - | 3 | -55°C | 150°C | 103K |
| 822. | 2SA1291 | PNP transistor 60V/10A for high-speed switching applications | SANYO | - | 3 | -55°C | 150°C | 103K |
| 823. | 2SA1292 | PNP transistor 60V/15A for high-speed switching applications | SANYO | - | 3 | -55°C | 150°C | 98K |
| 824. | HB54A5129F1-10B | 64M; 100MHz registered DDR SDRAM DIMM | ELPID | - | 184 | - | - | 165K |
| 825. | HB54A5129F1-A75B | 64M; 133MHz registered DDR SDRAM DIMM | ELPID | - | 184 | - | - | 165K |
| 826. | HB54A5129F1-B75B | 64M; 133MHz registered DDR SDRAM DIMM | ELPID | - | 184 | - | - | 165K |
| 827. | HB54A5129F1U-10B | 512M; 100MHz DDR SDRAM SO-DIMM | ELPID | - | 184 | -25°C | 85°C | 186K |
| 828. | HB54A5129F1U-A75B | 512M; 133MHz DDR SDRAM SO-DIMM | ELPID | - | 184 | -25°C | 85°C | 186K |
| 829. | HB54A5129F1U-B75B | 512M; 133MHz DDR SDRAM SO-DIMM | ELPID | - | 184 | -25°C | 85°C | 186K |
| 830. | TC7129CKW | 4-1/2 digit analog-to-digital converters with on-chip LCD drivers | MCHIP | PQFP | 44 | 0°C | 70°C | 550K |
| 831. | TC7129CLW | 4-1/2 digit analog-to-digital converters with on-chip LCD drivers | MCHIP | PLCC | 44 | 0°C | 70°C | 550K |
| 832. | UT62S12916BS-100LI | Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM | UTRON | BGA | 48 | -40°C | 85°C | 233K |
| 833. | UT62S12916BS-100LLI | Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM | UTRON | BGA | 48 | -40°C | 85°C | 233K |
| 834. | UT62S12916BS-70LI | Access time: 70 ns, 128 K x 16 Bit low power CMOS SRAM | UTRON | BGA | 48 | -40°C | 85°C | 233K |
| 835. | UT62S12916BS-70LLI | Access time: 70 ns, 128 K x 16 Bit low power CMOS SRAM | UTRON | BGA | 48 | -40°C | 85°C | 233K |
| 836. | VTE1291-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 837. | VTE1291-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 838. | VTE1291W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 33K |
| 839. | VTE1291W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 33K |
| 840. | VTE1295 | GaAlAs infrared emitting diode. Irradiance(typ) 5.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 27K |
