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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 3081. | HB54R5128KN-10B | 512M; 125MHz DDR SDRAM SO-DIMM | ELPID | - | 200 | - | - | 514K |
| 3082. | HB54R5128KN-A75B | 512M; 133MHz DDR SDRAM SO-DIMM | ELPID | - | 200 | - | - | 514K |
| 3083. | HB54R5128KN-B75B | 512M; 133MHz DDR SDRAM SO-DIMM | ELPID | - | 200 | - | - | 514K |
| 3084. | MC-4R128FKE6D-653 | 128M; 653MHz direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 113K |
| 3085. | MC-4R128FKE6D-745 | 128M; 745MHz direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 113K |
| 3086. | MC-4R128FKE6D-845 | 128M; 845MHz direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 113K |
| 3087. | MC-4R128FKE8D-653 | 128M-byte (64M-WORD x 18-bit) direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 113K |
| 3088. | MC-4R128FKE8D-745 | 128M-byte (64M-WORD x 18-bit) direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 113K |
| 3089. | MC-4R128FKE8D-845 | 128M-byte (64M-WORD x 18-bit) direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 113K |
| 3090. | MC-4R128FKE8S-845 | 128M; 800MHz direct rambus DRAM SO-RIMM module | ELPID | BGA | 160 | - | - | 123K |
| 3091. | PD45128163G5-A75L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | ELPID | TSOP | 54 | - | - | 682K |
| 3092. | PD45128163G5-A80L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | ELPID | TSOP | 54 | - | - | 682K |
| 3093. | PD45128168G5-A10-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | ELPID | TSOP | 54 | - | - | 682K |
| 3094. | PD45128441G5-A10T-9JF | 128M; 100MHz synchronous DRAM 4-bank, LVTTL | ELPID | TSOP | 54 | -20°C | 85°C | 713K |
| 3095. | PD45128441G5-A75L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | ELPID | TSOP | 54 | - | - | 682K |
| 3096. | PD45128441G5-A75T-9JF | 128M; 133MHz synchronous DRAM 4-bank, LVTTL | ELPID | TSOP | 54 | -20°C | 85°C | 713K |
| 3097. | PD45128441G5-A80L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | ELPID | TSOP | 54 | - | - | 682K |
| 3098. | PD45128441G5-A80T-9JF | 128M; 125MHz synchronous DRAM 4-bank, LVTTL | ELPID | TSOP | 54 | -20°C | 85°C | 713K |
| 3099. | PD45128841G5-A10T-9JF | 128M; 100MHz synchronous DRAM 4-bank, LVTTL | ELPID | TSOP | 54 | -20°C | 85°C | 713K |
| 3100. | PD45128841G5-A80T-9JF | 128M; 125MHz synchronous DRAM 4-bank, LVTTL | ELPID | TSOP | 54 | -20°C | 85°C | 713K |
