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Found: 114      Displaying: 81 - 100
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
81.
B120B20V, 1.0A surface mount schottky barrier rectifier
LITON
SMB
2
-55°C
125°C
36K
82.
BGY120B3.5 V, UNF amplifier module
PHLPS
SOT
5
-30°C
100°C
45K
83.
ES5120BQ3 3/4 digit A/D converter
CYRTK
DIP
40
0°C
70°C
399K
84.
ES5120BZ3 3/4 digit A/D converter
CYRTK
QFP
44
0°C
70°C
399K
85.
HGT1S10N120BNS35A, 1200V, NPT Series N-Channel IGBT
FAIR
-
-
-
-
217K
86.
HS120B5 V, +/-50 ppm, TTL compatible enable/disable crystal clock oscillator
NELFC
SMD
14
-40°C
85°C
358K
87.
HSA120B3.3 V, +/-50 ppm, TTL compatible enable/disable crystal clock oscillator
NELFC
SMD
14
-40°C
85°C
358K
88.
IXGR35N120B1200V HiPerFAST IGBT
IXYS
ISOPLUS247
3
-55°C
150°C
49K
89.
IXSA15N120B1200V high voltage IGBT
IXYS
TO-263AA
3
-55°C
150°C
84K
90.
IXSP15N120B1200V high voltage IGBT
IXYS
-
3
-55°C
150°C
84K
91.
SM120B5 V, +/-50 ppm, TTL compatible enable/disable crystal clock oscillator
NELFC
SMD
14
-40°C
85°C
358K
92.
SMA120B3.3 V, +/-50 ppm, TTL compatible enable/disable crystal clock oscillator
NELFC
SMD
14
-40°C
85°C
358K
93.
SMTBJ120BSMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 120V. Peak pulse current Ipp = 100A (10/1000usec), 250A (8-20us expo).
LIFUS
-
2
0°C
150°C
81K
94.
T10A120BT10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Bulk (500pcs).
LIFUS
-
2
-40°C
150°C
68K
95.
T10B120BT10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 110V,max. Ir = 50uA @ Vr = 120V,max, Bulk (500pcs).
LIFUS
-
2
-40°C
150°C
70K
96.
TSP120BAxial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA.
PAJIT
DO-15
2
-40°C
65°C
117K
97.
TSP120BAxial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA.
PAJIT
DO-15
2
-40°C
65°C
117K
98.
TSP120BAxial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA.
PAJIT
DO-15
2
-40°C
65°C
117K
99.
V62C1162048L-120BUltra low power 128K x 16 CMOS SRAM
MOSEL
BGA
48
0°C
70°C
109K
100.
V62C1162048LL-120BUltra low power 128K x 16 CMOS SRAM
MOSEL
BGA
48
0°C
70°C
109K
1 2 3 4 5 6


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