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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 221. | AH11BAL-PCB | 50- 1500MHz, 11V; high dynamic range amplifier | WJ | SOIC | 8 | -40°C | 85°C | 127K |
| 222. | AIC1811BCV | Overcharge protection voltage: 4.30V; one-cell lithium-lon battery protection IC | AIC | SOT-23 | 5 | 0°C | 70°C | 118K |
| 223. | AME8811BEAT | Output voltage: 3.0V; 300mA CMOS LDO | AME | - | 3 | -40°C | 85°C | 132K |
| 224. | AME8811BEFT | Output voltage: 3.0V; 300mA CMOS LDO | AME | SOT-89 | 3 | -40°C | 85°C | 132K |
| 225. | APT10M11B2VR | 100V, 100A power MOS V transistor | ADPOW | T-MAX | 3 | -55°C | 150°C | 63K |
| 226. | APT6011B2VFR | 600V, 49A power MOS V transistor | ADPOW | T-MAX | 3 | -55°C | 150°C | 34K |
| 227. | APT6011B2VR | 600V, 49A power MOS V transistor | ADPOW | T-MAX | 3 | -55°C | 150°C | 39K |
| 228. | H11B1 | 5V; 80mA optically coupled isolator photodarlington output | ISOCM | Dual-in-line | 6 | -55°C | 100°C | 51K |
| 229. | H11B2 | 5V; 80mA optically coupled isolator photodarlington output | ISOCM | Dual-in-line | 6 | -55°C | 100°C | 51K |
| 230. | HZS11B1 | 10.2-10.6V zener diode for stabilized power supply | HIT | MHD | 2 | -55°C | 175°C | 39K |
| 231. | HZS11B2 | 10.4-10.8V zener diode for stabilized power supply | HIT | MHD | 2 | -55°C | 175°C | 39K |
| 232. | HZS11B3 | 10.7-11.1V zener diode for stabilized power supply | HIT | MHD | 2 | -55°C | 175°C | 39K |
| 233. | MT28C3212P2FL-11BET | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 564K |
| 234. | MT28C3212P2NFL-11BET | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 564K |
| 235. | MTAN7185M2-11BW | 0.85 inches 8 x 8 dot matrix display. Peak wavelength 660nm. Emitted color red. Surface color black. Epoxy color white. | MRKTE | - | 16 | -25°C | 85°C | 43K |
| 236. | RN5RK511B-TL | VFM step-up DC/DC converter. Output voltage 5.1V. Internal Lx Tr. driver. Duty cycle 55%. Taping type TL | RICOH | SOT-23 | 5 | -40°C | 85°C | 226K |
| 237. | TC911BCOA | Monolithic auto-zeroed operational amplifers, maximum offset voltage 30uV | MCHIP | SOIC | 8 | 0°C | 70°C | 60K |
| 238. | TC911BCOA | Auto-zeroed operational amplifier. Maximum offset voltage 30 microV. | TCOM | SOIC | 8 | 0°C | 70°C | 69K |
| 239. | TC911BCPA | Monolithic auto-zeroed operational amplifers, maximum offset voltage 30uV | MCHIP | PDIP | 8 | 0°C | 70°C | 60K |
| 240. | TC911BCPA | Auto-zeroed operational amplifier. Maximum offset voltage 30 microV. | TCOM | Plastic DIP | 8 | 0°C | 70°C | 69K |
