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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1041. | 2N4117A | N-Channel silicon junction field-effect transistor | IFET | TO-72 | 4 | - | - | 91K |
| 1042. | 2N4117A | Ultra-high input impedance N-channel JFET | LISYS | TO-72 | 4 | -65°C | 175°C | 10M |
| 1043. | AIC1117A-28CE | 1A low dropout positive adjustable regulator | AIC | TO-252 | 3 | 0°C | 125°C | 136K |
| 1044. | AIC1117A-33CE | 1A low dropout positive adjustable regulator | AIC | TO-252 | 3 | 0°C | 125°C | 136K |
| 1045. | AME1117ACBT | 1A low dropout positive voltage regulator | AME | TO-220 | 3 | 0°C | 125°C | 128K |
| 1046. | AME1117ACCT | 1A low dropout positive voltage regulator | AME | TO-252 | 3 | 0°C | 125°C | 128K |
| 1047. | AME1117ACGT | 1A low dropout positive voltage regulator | AME | SOT-223 | 3 | 0°C | 125°C | 128K |
| 1048. | AME1117BCBT | 1A low dropout positive voltage regulator | AME | TO-220 | 3 | 0°C | 125°C | 128K |
| 1049. | AME1117BCCT | 1A low dropout positive voltage regulator | AME | TO-252 | 3 | 0°C | 125°C | 128K |
| 1050. | AME1117BCGT | 1A low dropout positive voltage regulator | AME | SOT-223 | 3 | 0°C | 125°C | 128K |
| 1051. | AME1117CCBT | 1A low dropout positive voltage regulator | AME | TO-220 | 3 | 0°C | 125°C | 128K |
| 1052. | AME1117CCGT | 1A low dropout positive voltage regulator | AME | SOT-223 | 3 | 0°C | 125°C | 128K |
| 1053. | AME1117DCBT | 1A low dropout positive voltage regulator | AME | TO-220 | 3 | 0°C | 125°C | 128K |
| 1054. | AME1117DCCT | 1A low dropout positive voltage regulator | AME | TO-252 | 3 | 0°C | 125°C | 128K |
| 1055. | AME1117DCGT | 1A low dropout positive voltage regulator | AME | SOT-223 | 3 | 0°C | 125°C | 128K |
| 1056. | COM117HVT | Three terminal, precision adjustable positive voltage regulator | OMNI | TO-257 | 2 | -55°C | 125°C | 18K |
| 1057. | EM32117Q | 16 digit LCD driver | EMC | QFP | 80 | 0°C | 50°C | 193K |
| 1058. | F1170 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 43K |
| 1059. | F1174 | 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 45K |
| 1060. | FN4117A | Ultra-high input impedance N-channel JFET | LISYS | TO-72 | 4 | -65°C | 175°C | 10M |
