We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1401. | AA210-25 | GaAs IC 4 bit digital attenuator 1 dB LSB DC-2 GHz | ALPHA | SOIC | 16 | -40°C | 85°C | 38K |
| 1402. | ABR1002 | 200 V, 10 A Avalanche bridge rectifier | EIC | BR10 | 4 | -50°C | 150°C | 31K |
| 1403. | BR1002 | 200 V, 10 A silicon bridge rectifier | EIC | BR10 | 4 | -40°C | 150°C | 40K |
| 1404. | EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO247 | 3 | -55°C | 150°C | 227K |
| 1405. | EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 227K |
| 1406. | EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3P | 3 | -55°C | 150°C | 227K |
| 1407. | ECF10N25 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 64K |
| 1408. | ECF10P25 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 64K |
| 1409. | FBR1002 | 200 V, 10 A, fast recovery bridge rectifier | EIC | BR10 | 4 | -50°C | 150°C | 19K |
| 1410. | PIC16C710-20/P | Bits number of 8 Memory configuration 512x14 Memory type OTP Microprocessor/controller features In-system Programming, Brown-out Protection, Watchdog Frequency clock 20 MHz Memory size 512 b | MCHIP | DIL | 18 | - | - | 1M |
| 1411. | PIC16C710-20/SO | Bits number of 8 Memory configuration 512x14 Memory type OTP Microprocessor/controller features In-system Programming, Brown-out Protection, Watchdog Frequency clock 20 MHz Memory size 512 b | MCHIP | SMD | 18 | - | - | 1M |
| 1412. | PIC16C710-20I/P | Bits number of 8 Memory configuration 512x14 Memory type OTP Microprocessor/controller features In-system Programming, Brown-out Protection, Watchdog Frequency | MCHIP | DIL | 18 | - | - | 1M |
| 1413. | PIC16C710-20I/SO | Bits number of 8 Memory configuration 512x14 Memory type OTP Microprocessor/controller features In-system Programming, Brown-out Protection, Watchdog Frequency | MCHIP | SMD | 18 | - | - | 1M |
| 1414. | RBV1002 | 200 V, 10 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 19K |
| 1415. | RBV1002D | 200 V, 10 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 41K |
| 1416. | SZ1012 | 12 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
| 1417. | SZ1022 | 22 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
| 1418. | SZ1062 | 62 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
| 1419. | SZ1082 | 82 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
| 1420. | SZ10B2 | 120 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
