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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 2220 Displaying: 1201 - 1220| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1201. | HSH1002CEO | Lamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max). | PERK | - | 2 | - | - | 45K | | 1202. | HSH1002GEO | Lamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max). | PERK | - | 2 | - | - | 47K | | 1203. | HSH1002NEO | Lamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max). | PERK | - | 2 | - | - | 46K | | 1204. | HSH1002NILO | Lamp for photolithography. Iding mode power 700 watts, current 27 amps(DC), voltage 26 volts(DC). Flash mode power 1000 watts, current 36 amps(DC), voltage 28 volts(DC). Temperature(at base) 220degC(max). | PERK | - | 2 | - | - | 46K | | 1205. | HSH1002UEO | Lamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max). | PERK | - | 2 | - | - | 46K | | 1206. | HTZ110A22K | 22000V high voltage diode rectifier module | IXYS | SOT-227B | 4 | - | - | 205K | | 1207. | HTZ110A25K | 25000V high voltage diode rectifier module | IXYS | SOT-227B | 4 | - | - | 205K | | 1208. | ILA1062AN | Low voltage transmission circuit with dialler interface | INTGR | Plastic DIP | 16 | -25°C | 75°C | 379K | | 1209. | MDD310-22N1 | 2200V high power diode module | IXYS | - | 3 | -40°C | 150°C | 115K | | 1210. | PDM4M4110S20M | 512K x 32 CMOS static RAM module | PARAD | SIMM | 72 | 0°C | 70°C | 271K | | 1211. | PDM4M4110S20Z | 512K x 32 CMOS static RAM module | PARAD | ZIP | 72 | 0°C | 70°C | 271K | | 1212. | PDM4M4110S25M | 512K x 32 CMOS static RAM module | PARAD | SIMM | 72 | 0°C | 70°C | 271K | | 1213. | PDM4M4110S25Z | 512K x 32 CMOS static RAM module | PARAD | ZIP | 72 | 0°C | 70°C | 271K | | 1214. | REC10-2005SRWL | 10W DC/DC converter with 20V input, 5/2000mA output | RECOM | DIL | 6 | -25°C | 70°C | 82K | | 1215. | REC10-2205SRWL | 10W DC/DC converter with 22V input, 5/2000mA output | RECOM | DIL | 6 | -25°C | 70°C | 82K | | 1216. | REC10-2305SRWL | 10W DC/DC converter with 23V input, 5/2000mA output | RECOM | DIL | 6 | -25°C | 70°C | 82K | | 1217. | VN2210N2 | 100V N-channel enhancement-mode vertical DMOS FET | SUTEX | TO-39 | 3 | -55°C | 150°C | 44K | | 1218. | VTB1012 | Process photodiode. Isc = 13 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-46 | 2 | -40°C | 110°C | 27K | | 1219. | VTB1012B | Process photodiode. Isc = 1.3 microA, Voc = 420 mV at H = 100 fc, 2850 K. | PERK | TO-46 | 2 | -40°C | 110°C | 27K | | 1220. | VTP1012 | Process photodiodes | PERK | TO-46 | 2 | -40°C | 110°C | 26K |
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