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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1061. | EN27LV010120J | 1Megabit low voltage EPROM (128K x 8). Speed 120ns. 3.0V to 3.6V Vcc tolerance. | EON | PLCC | 32 | 0°C | 70°C | 83K |
| 1062. | EN27LV010120JI | 1Megabit low voltage EPROM (128K x 8). Speed 120ns. 3.0V to 3.6V Vcc tolerance. | EON | PLCC | 32 | -40°C | 85°C | 83K |
| 1063. | EN27LV010120P | 1Megabit low voltage EPROM (128K x 8). Speed 120ns. 3.0V to 3.6V Vcc tolerance. | EON | PDIP | 32 | 0°C | 70°C | 83K |
| 1064. | EN27LV010120PI | 1Megabit low voltage EPROM (128K x 8). Speed 120ns. 3.0V to 3.6V Vcc tolerance. | EON | PDIP | 32 | -40°C | 85°C | 83K |
| 1065. | EN27LV010120T | 1Megabit low voltage EPROM (128K x 8). Speed 120ns. 3.0V to 3.6V Vcc tolerance. | EON | TSOP | 32 | 0°C | 70°C | 83K |
| 1066. | EN27LV010120TI | 1Megabit low voltage EPROM (128K x 8). Speed 120ns. 3.0V to 3.6V Vcc tolerance. | EON | TSOP | 32 | -40°C | 85°C | 83K |
| 1067. | EN27LV010B200J | 1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. | EON | PLCC | 32 | 0°C | 70°C | 83K |
| 1068. | EN27LV010B200JI | 1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. | EON | PLCC | 32 | -40°C | 85°C | 83K |
| 1069. | EN27LV010B200P | 1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. | EON | PDIP | 32 | 0°C | 70°C | 83K |
| 1070. | EN27LV010B200PI | 1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. | EON | PDIP | 32 | -40°C | 85°C | 83K |
| 1071. | EN27LV010B200T | 1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. | EON | TSOP | 32 | 0°C | 70°C | 83K |
| 1072. | F1002 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 1073. | F1012 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 1074. | F1022 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 1075. | F1072 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 1076. | HMS81032E | ROM/RAM size: 32K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller | HYNIX | DIP | 20 | 0°C | 70°C | 1M |
| 1077. | HMS81032E | ROM/RAM size: 32K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller | HYNIX | SOP | 20 | 0°C | 70°C | 1M |
| 1078. | HMS81032E | ROM/RAM size: 32 K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller | HYNIX | SOP | 24 | 0°C | 70°C | 1M |
| 1079. | HMS81032TL | ROM/RAM size: 32K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller | HYNIX | DIP | 20 | 0°C | 70°C | 1M |
| 1080. | HMS81032TL | ROM/RAM size: 32K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller | HYNIX | SOP | 20 | 0°C | 70°C | 1M |
