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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1061. | D10SB100 | 1000 V, 10 A, bridge rectifier | LRC | SIP | 4 | - | - | 60K |
| 1062. | D10SB100 | Single phase glass passivated SIP bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 10 A. | SSE | DB10SB | 4 | -55°C | 150°C | 16K |
| 1063. | D10SB20 | 200 V, 10 A, bridge rectifier | LRC | SIP | 4 | - | - | 60K |
| 1064. | D10SB40 | 400 V, 10 A, bridge rectifier | LRC | SIP | 4 | - | - | 60K |
| 1065. | D10SB40 | Single phase glass passivated SIP bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 10 A. | SSE | DB10SB | 4 | -55°C | 150°C | 16K |
| 1066. | D10SB60 | 600 V, 10 A, bridge rectifier | LRC | SIP | 4 | - | - | 60K |
| 1067. | D10SB60 | Single phase glass passivated SIP bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 10 A. | SSE | DB10SB | 4 | -55°C | 150°C | 16K |
| 1068. | D10SB80 | 800 V, 10 A, bridge rectifier | LRC | SIP | 4 | - | - | 60K |
| 1069. | D10SB80 | Single phase glass passivated SIP bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 10 A. | SSE | DB10SB | 4 | -55°C | 150°C | 16K |
| 1070. | RC10S01 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1071. | RC10S01G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1072. | RC10S02 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1073. | RC10S02G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1074. | RC10S04 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1075. | RC10S04G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1076. | RC10S06 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1077. | RC10S06G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1078. | RC10S08G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1079. | RC10S10 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 1080. | RC10S10G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
