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Found: 1277      Displaying: 1041 - 1060
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1041.
 A62S6308G-10SI100ns; operating current:40mA;standby current:30uA 64K x 8bit low voltage CMOS SRAM
AMIC
BGA
36
0°C
70°C
345K
1042.
 A62S6308M-10SI100ns; operating current:40mA;standby current:30uA 64K x 8bit low voltage CMOS SRAM
AMIC
SOP
32
0°C
70°C
345K
1043.
 A62S6308V-10SI100ns; operating current:40mA;standby current:30uA 64K x 8bit low voltage CMOS SRAM
AMIC
TSOP
32
0°C
70°C
345K
1044.
 A62S6308X-10SI100ns; operating current:40mA;standby current:30uA 64K x 8bit low voltage CMOS SRAM
AMIC
TSOP
32
0°C
70°C
345K
1045.
 D10SB10Single phase glass passivated SIP bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10 A.
SSE
DB10SB
4
-55°C
150°C
16K
1046.
 D10SB20Single phase glass passivated SIP bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 10 A.
SSE
DB10SB
4
-55°C
150°C
16K
1047.
 G10S1B-DC12Relay. Nominal voltage 12VDC. Coil resistance(+-10%) 320W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1048.
 G10S1B-DC24Relay. Nominal voltage 24VDC. Coil resistance(+-10%) 1150W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1049.
 G10S1B-DC9Relay. Nominal voltage 9VDC. Coil resistance(+-10%) 180W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1050.
 G10S1B-DC9Relay. Nominal voltage 9VDC. Coil resistance(+-10%) 180W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1051.
 G10S1C-DC12Relay. Nominal voltage 12VDC. Coil resistance(+-10%) 320W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1052.
 G10S1C-DC3Relay. Nominal voltage 3VDC. Coil resistance(+-10%) 20W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1053.
 G10S1C-DC5Relay. Nominal voltage 5VDC. Coil resistance(+-10%) 56W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1054.
 G10S1C-DC6Relay. Nominal voltage 6VDC. Coil resistance(+-10%) 80W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1055.
 G10S1C-DC9Relay. Nominal voltage 9VDC. Coil resistance(+-10%) 180W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1056.
 G10S2C-DC12Relay. Nominal voltage 12VDC. Coil resistance(+-10%) 320W. Contact material & rating: Spec. alloy silver flash, 10A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1057.
 G10S2C-DC24Relay. Nominal voltage 24VDC. Coil resistance(+-10%) 1150W. Contact material & rating: Spec. alloy silver flash, 10A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1058.
 G10S2C-DC3Relay. Nominal voltage 3VDC. Coil resistance(+-10%) 20W. Contact material & rating: Spec. alloy silver flash, 10A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1059.
 G10S2C-DC5Relay. Nominal voltage 5VDC. Coil resistance(+-10%) 56W. Contact material & rating: Spec. alloy silver flash, 10A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1060.
 G10S2C-DC6Relay. Nominal voltage 6VDC. Coil resistance(+-10%) 80W. Contact material & rating: Spec. alloy silver flash, 10A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
1061.
 G10S2C-DC9Relay. Nominal voltage 9VDC. Coil resistance(+-10%) 180W. Contact material & rating: Spec. alloy silver flash, 10A. Contact arrangement: 1 form C. Endosure: sealed.
GCC
-
5
-30°C
60°C
51K
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