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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 741. | EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO3P | 3 | -55°C | 150°C | 227K |
| 742. | EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO247 | 3 | -55°C | 150°C | 227K |
| 743. | EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 227K |
| 744. | EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO247 | 3 | -55°C | 150°C | 227K |
| 745. | EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 227K |
| 746. | EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3P | 3 | -55°C | 150°C | 227K |
| 747. | ECF10N25 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 64K |
| 748. | HSH2510NILO | Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). | PERK | - | 2 | - | - | 42K |
| 749. | TC1410NCOA | 0.5A high-speed MOSFET driver. | TCOM | SOIC | 8 | 0°C | 70°C | 65K |
| 750. | TC1410NCPA | 0.5A high-speed MOSFET driver. | TCOM | Plastic DIP | 8 | 0°C | 70°C | 65K |
| 751. | TC1410NEOA | 0.5A high-speed MOSFET driver. | TCOM | SOIC | 8 | -40°C | 85°C | 65K |
| 752. | TC1410NEPA | 0.5A high-speed MOSFET driver. | TCOM | Plastic DIP | 8 | -40°C | 85°C | 65K |
| 753. | TP2510N8 | 100V P-channel enhancement-mode vertical DMOS FET | SUTEX | TO-243AA | 3 | -55°C | 150°C | 456K |
| 754. | TP2510ND | 100V P-channel enhancement-mode vertical DMOS FET | SUTEX | Die | 3 | -55°C | 150°C | 456K |
| 755. | VN2110ND | 100V N-channel enhancement-mode vertical DMOS FET | SUTEX | Die | 3 | -55°C | 150°C | 457K |
| 756. | VN2210N2 | 100V N-channel enhancement-mode vertical DMOS FET | SUTEX | TO-39 | 3 | -55°C | 150°C | 44K |
| 757. | VN2210N3 | 100V N-channel enhancement-mode vertical DMOS FET | SUTEX | - | 3 | -55°C | 150°C | 44K |
| 758. | VP2110ND | 100V P-channel enhancement-mode vertical DMOS FET | SUTEX | Die | 3 | -55°C | 150°C | 456K |
| 759. | Z0410NF0AA2 | Triacs, 4A, 800V, sensitivity 25mA | STM | TO202-3 | 3 | -40°C | 125°C | 55K |
| 760. | Z0410NF1AA2 | Triacs, 4A, 800V, sensitivity 25mA | STM | TO202-3 | 3 | -40°C | 125°C | 55K |
