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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 59 Displaying: 21 - 40# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 21. | 10A1 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 10.0 A. | BYTES | R-6 | 2 | -65°C | 150°C | 190K | 22. | 10A10 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 10.0 A. | BYTES | R-6 | 2 | -65°C | 150°C | 190K | 23. | AGN210A12X | GN-relay. Ultra-small package slim polarized relay. Coil voltage 12 V DC. 2 form C. 1 coil latching. Surface-mount terminal A type. Tape and reel packing (picked from 1/2/3/4-pin side).. | NAIS | - | 8 | -40°C | 85°C | 103K | 24. | AGN210A1HX | GN-relay. Ultra-small package slim polarized relay. Coil voltage 1.5 V DC. 2 form C. 1 coil latching. Surface-mount terminal A type. Tape and reel packing (picked from 1/2/3/4-pin side).. | NAIS | - | 8 | -40°C | 85°C | 103K | 25. | HTZ110A16K | 16000V high voltage diode rectifier module | IXYS | SOT-227B | 4 | - | - | 205K | 26. | HTZ110A19K | 19000V high voltage diode rectifier module | IXYS | SOT-227B | 4 | - | - | 205K | 27. | T10A100B | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 90V,max. Ir = 50uA @ Vr = 100V,max, Bulk (500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K | 28. | T10A100T | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 90V,max. Ir = 50uA @ Vr = 100V,max, Tape and reeled (1500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K | 29. | T10A120B | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Bulk (500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K | 30. | T10A120T | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K | 31. | T10A130B | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 117V,max. Ir = 50uA @ Vr = 130V,max, Bulk (500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K | 32. | T10A130T | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 117V,max. Ir = 50uA @ Vr = 130V,max, Tape and reeled (1500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K | 33. | T10A180B | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 162V,max. Ir = 50uA @ Vr = 180V,max, Bulk (500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K | 34. | T10A180T | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 162V,max. Ir = 50uA @ Vr = 180V,max, Tape and reeled (1500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K | 35. | TCH10A15 | 150 V, 10 A, diode | NIHON | TO | 3 | -40°C | 150°C | 29K | 36. | TCH10A15-11A | 150 V, 10 A, diode | NIHON | TO | 3 | -40°C | 150°C | 29K | 37. | ZXMN10A11GFTA | 100 V N-channel enhancement mode mosfet | ZETEX | SOT | 5 | -55°C | 150°C | 1M | 38. | ZXMN10A11GFTA | 100 V N-channel enhancement mode mosfet | ZETEX | SOT | 5 | -55°C | 150°C | 1M | 39. | ZXMN10A11GFTC | 100 V N-channel enhancement mode mosfet | ZETEX | SOT | 5 | -55°C | 150°C | 1M | 40. | ZXMN10A11GFTC | 100 V N-channel enhancement mode mosfet | ZETEX | SOT | 5 | -55°C | 150°C | 1M |
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