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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1081. | 10A01 | 50V; 10A rectifier; high current capability and low forward voltage drop | DIODS | R-6 | 2 | -65°C | 150°C | 48K |
1082. | 10A05 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 10.0 A. | BYTES | R-6 | 2 | -65°C | 150°C | 190K |
1083. | 10A1 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 10.0 A. | BYTES | R-6 | 2 | -65°C | 150°C | 190K |
1084. | 10A10 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 10.0 A. | BYTES | R-6 | 2 | -65°C | 150°C | 190K |
1085. | 10A4 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 10.0 A. | BYTES | R-6 | 2 | -65°C | 150°C | 190K |
1086. | 10A6 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 10.0 A. | BYTES | R-6 | 2 | -65°C | 150°C | 190K |
1087. | 10A8 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 10.0 A. | BYTES | R-6 | 2 | -65°C | 150°C | 190K |
1088. | BS616LV1010AC | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | BSI | BGA | 44 | 0°C | 70°C | 216K |
1089. | BS616LV1010AI | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | BSI | BGA | 44 | 0°C | 85°C | 216K |
1090. | BS616LV4010AC | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 227K |
1091. | BS616LV4010AI | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 227K |
1092. | BS616UV1010AC | 150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 216K |
1093. | BS616UV1010AI | 150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 216K |
1094. | PEEL22LV10AZJI-35 | CMOS programmable electrically erasable logic device, 35ns | ICT | PLCC | 28 | -40°C | 85°C | 135K |
1095. | SF10AG | 50V; 1.0A super fast glass passivated rectifier; diffused junction | DIODS | - | 2 | -65°C | 150°C | 62K |
1096. | SR10A0 | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. | CNEL | - | 3 | -65°C | 150°C | 179K |
1097. | SR10A0A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. | CNEL | - | 2 | -65°C | 150°C | 179K |
1098. | SRF10A0 | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. | CNEL | ITO-220AB | 3 | -65°C | 150°C | 170K |
1099. | SRF10A0A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. | CNEL | ITO-220AB | 3 | -65°C | 150°C | 170K |
1100. | US3010ACW | 1.3-3.5V 5-bit programmable synchronous buck controller IC | UNSM | SOIC | 20 | 0°C | 70°C | 74K |