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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
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Found: 1331      Displaying: 1081 - 1100
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1081.
10A0150V; 10A rectifier; high current capability and low forward voltage drop
DIODS
R-6
2
-65°C
150°C
48K
1082.
10A05Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 10.0 A.
BYTES
R-6
2
-65°C
150°C
190K
1083.
10A1Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 10.0 A.
BYTES
R-6
2
-65°C
150°C
190K
1084.
10A10Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 10.0 A.
BYTES
R-6
2
-65°C
150°C
190K
1085.
10A4Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 10.0 A.
BYTES
R-6
2
-65°C
150°C
190K
1086.
10A6Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 10.0 A.
BYTES
R-6
2
-65°C
150°C
190K
1087.
10A8Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 10.0 A.
BYTES
R-6
2
-65°C
150°C
190K
1088.
BS616LV1010AC70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
BGA
44
0°C
70°C
216K
1089.
BS616LV1010AI70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
BGA
44
0°C
85°C
216K
1090.
BS616LV4010AC70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit
BSI
BGA
48
0°C
70°C
227K
1091.
BS616LV4010AI70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit
BSI
BGA
48
-40°C
85°C
227K
1092.
BS616UV1010AC150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
BGA
48
0°C
70°C
216K
1093.
BS616UV1010AI150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
BGA
48
-40°C
85°C
216K
1094.
PEEL22LV10AZJI-35CMOS programmable electrically erasable logic device, 35ns
ICT
PLCC
28
-40°C
85°C
135K
1095.
SF10AG50V; 1.0A super fast glass passivated rectifier; diffused junction
DIODS
-
2
-65°C
150°C
62K
1096.
SR10A0Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A.
CNEL
-
3
-65°C
150°C
179K
1097.
SR10A0ASchottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A.
CNEL
-
2
-65°C
150°C
179K
1098.
SRF10A0Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A.
CNEL
ITO-220AB
3
-65°C
150°C
170K
1099.
SRF10A0ASchottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A.
CNEL
ITO-220AB
3
-65°C
150°C
170K
1100.
US3010ACW1.3-3.5V 5-bit programmable synchronous buck controller IC
UNSM
SOIC
20
0°C
70°C
74K
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