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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 421. | AME7107ACKW | 3-1/2 digit A/D converter high accuracy, low power | AME | PQFP | 44 | 0°C | 70°C | 1M |
| 422. | AME7107RCPL | 3-1/2 digit A/D converter high accuracy, low power | AME | PDIP | 40 | 0°C | 70°C | 1M |
| 423. | AME7107Y | 3-1/2 digit A/D converter high accuracy, low power | AME | DICE | 44 | 0°C | 70°C | 1M |
| 424. | EN27C01070J | 1Megabit EPROM (128K x 8). Speed 70ns. Single 5V pover supply. | EON | PLCC | 32 | 0°C | 70°C | 80K |
| 425. | EN27C01070JI | 1Megabit EPROM (128K x 8). Speed 70ns. Single 5V pover supply. | EON | PLCC | 32 | -40°C | 85°C | 80K |
| 426. | EN27C01070P | 1Megabit EPROM (128K x 8). Speed 70ns. Single 5V pover supply. | EON | PDIP | 32 | 0°C | 70°C | 80K |
| 427. | EN27C01070PI | 1Megabit EPROM (128K x 8). Speed 70ns. Single 5V pover supply. | EON | PDIP | 32 | -40°C | 85°C | 80K |
| 428. | EN27C01070T | 1Megabit EPROM (128K x 8). Speed 70ns. Single 5V pover supply. | EON | TSOP | 32 | 0°C | 70°C | 80K |
| 429. | EN27C01070TI | 1Megabit EPROM (128K x 8). Speed 70ns. Single 5V pover supply. | EON | TSOP | 32 | -40°C | 85°C | 80K |
| 430. | F1070 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 431. | F1072 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 432. | F1074 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 40K |
| 433. | F1076 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 434. | F1077 | 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 435. | HH-107BNC | 2-200 MHz,180 hybrid lunction | MACOM | C-8 | 4 | -55°C | 85°C | 84K |
| 436. | HH-107SMA | 2-200 MHz,180 hybrid lunction | MACOM | C-8 | 4 | -55°C | 85°C | 84K |
| 437. | MA02107AF-R13 | 3.4 V, 1.2 W RF power amplifier IC | MACOM | TSSOP | 16 | -40°C | 70°C | 143K |
| 438. | MA02107AF-R7 | 3.4 V, 1.2 W RF power amplifier IC | MACOM | TSSOP | 16 | -40°C | 70°C | 143K |
| 439. | MA02107AF-SMB | 3.4 V, 1.2 W RF power amplifier IC | MACOM | TSSOP | 16 | -40°C | 70°C | 143K |
| 440. | OM6107SC | 400V N-channel MOSFET | OMNI | TO-258AA | 3 | -55°C | 150°C | 45K |
