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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1221. | 1035MP | 35 W, 50 V, 1025-1150 MHz common base transistor | GHZ | 55FU | 3 | - | - | 25K |
1222. | AA103-72 | GaAs IC 1 bit digital attenuator 10dB LSB DC-2.5 GHz | ALPHA | SOT | 5 | -40°C | 85°C | 24K |
1223. | AV103-12 | GaAs IC 35 dB voltage variable attenuator single positive control 0.5-2.5 GHz | ALPHA | SOIC | 8 | -55°C | 125°C | 50K |
1224. | ER103S | Isolation superfast recovery rectifier. Max recurrent peak reverse voltage 300V. Max average forward rectified current (9.5mm lead lehgths at Ta=55degC) 1.0A. | PAJIT | A-405 | 2 | -55°C | 150°C | 64K |
1225. | FR103G | 200 V, 1 A, glass passivated junction fast recovery rectifier | EIC | - | 2 | -65°C | 150°C | 31K |
1226. | RSZ-103.3P | 1W DC/DC converter with 10V input, 3.3V/200mA output | RECOM | SMD | 10 | -40°C | 70°C | 147K |
1227. | RSZ-1103P | 1W DC/DC converter with 11V input, 5V/200mA output | RECOM | SMD | 10 | -40°C | 70°C | 147K |
1228. | RSZ-2103P | 1W DC/DC converter with 21V input, 5V/200mA output | RECOM | SMD | 10 | -40°C | 70°C | 147K |
1229. | SB1030 | Schottky barrier rectifier. Max recurrent peak reverse voltage 30.0 V. Max average forward rectified current at Tc = 90degC 10 A. | PAJIT | TO-220AC | 2 | -50°C | 125°C | 38K |
1230. | SB1030CT | Schottky barrier rectifier. Max recurrent peak reverse voltage 30.0 V. Max average forward rectified current at Tc = 90degC 10 A. | PAJIT | - | 3 | -50°C | 125°C | 39K |
1231. | SB1030DC | DDPak surfase schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 100degC 10 A. | PAJIT | TO-263 | 3 | -50°C | 125°C | 46K |
1232. | SB1030F | Isolation schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 90degC 10 A. | PAJIT | ITO-220AC | 2 | -50°C | 125°C | 44K |
1233. | SPD1103-111 | Sampling phase detector | ALPHA | - | - | -55°C | 150°C | 450K |
1234. | SZ1030 | 30 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
1235. | SZ1033 | 33 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
1236. | SZ1036 | 36 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
1237. | SZ1039 | 39 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
1238. | SZ103D | 3.3 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
1239. | SZ103G | 3.6 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
1240. | SZ103J | 3.9 V, 1 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |