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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 261. | IC61S6432-100TQ | 100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM | ICSI | LQFP | 100 | 0°C | 70°C | 169K |
| 262. | IC61S6432-100TQI | 100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM | ICSI | LQFP | 100 | -40°C | 85°C | 169K |
| 263. | IC61SP12832-100TQ | 100MHz; 3.3V; 128K x 32 synchronous pipelined static RAM | ICSI | LQFP | 100 | 0°C | 70°C | 400K |
| 264. | IC62LV12816L-100T | 70ns; 2.7-3.6V; 128K x 16 low voltage, ultra low-power CMOS static RAM | ICSI | TSOP | 44 | 0°C | 70°C | 140K |
| 265. | IC62LV12816L-100TI | 70ns; 2.7-3.6V; 128K x 16 low voltage, ultra low-power CMOS static RAM | ICSI | TSOP | 44 | -40°C | 85°C | 140K |
| 266. | IC62LV12816LL-100T | 100ns; 2.7-3.6V; 128K x 16 low voltage, ultra low-power CMOS static RAM | ICSI | TSOP | 44 | 0°C | 70°C | 140K |
| 267. | IC62LV12816LL-100TI | 100ns; 2.7-3.6V; 128K x 16 low voltage, ultra low-power CMOS static RAM | ICSI | TSOP | 44 | -40°C | 85°C | 140K |
| 268. | IC62LV256-100T | 100ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | TSOP | 28 | 0°C | 70°C | 88K |
| 269. | IC62LV256-100TI | 100ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | TSOP | 28 | -40°C | 85°C | 88K |
| 270. | IC62LV5128L-100T | 70ns; 2.7-3.6V; 512K x 8 low power and low Vcc CMOS static RAM | ICSI | TSOP | 32 | 0°C | 70°C | 200K |
| 271. | IC62LV5128L-100TI | 70ns; 2.7-3.6V; 512K x 8 low power and low Vcc CMOS static RAM | ICSI | TSOP | 32 | -40°C | 85°C | 200K |
| 272. | IC62LV5128LL-100T | 70ns; 2.7-3.6V; 512K x 8 low power and low Vcc CMOS static RAM | ICSI | TSOP | 32 | 0°C | 70°C | 200K |
| 273. | IC62LV5128LL-100TI | 70ns; 2.7-3.6V; 512K x 8 low power and low Vcc CMOS static RAM | ICSI | TSOP | 32 | -40°C | 85°C | 200K |
| 274. | IC62VV5128L-100T | 100ns; 1.8V; 512K x 8 ultra low Vcc CMOS static RAM | ICSI | TSOP | 32 | 0°C | 70°C | 234K |
| 275. | IC62VV5128L-100T | 100ns; 1.8V; 512K x 8 ultra low Vcc CMOS static RAM | ICSI | TSOP | 32 | 0°C | 70°C | 234K |
| 276. | IC62VV5128L-100TI | 100ns; 1.8V; 512K x 8 ultra low Vcc CMOS static RAM | ICSI | TSOP | 32 | -40°C | 85°C | 234K |
| 277. | IC62VV5128LL-100T | 100ns; 1.8V; 512K x 8 ultra low Vcc CMOS static RAM | ICSI | TSOP | 32 | 0°C | 70°C | 234K |
| 278. | IHB100T480312 | 100 watt triple output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage: V1 +-3.3VDC, V2 +-12VDC, V3 +-12VDC; rated max.output current I1 +-30A, I2 +-4.2A, I3 +-4.2A. | CANDD | - | 12 | -40°C | 100°C | 265K |
| 279. | IHB100T480315 | 100 watt triple output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage: V1 +-3.3VDC, V2 +-15VDC, V3 +-15VDC; rated max.output current I1 +-30A, I2 +-3.4A, I3 +-3.4A. | CANDD | - | 12 | -40°C | 100°C | 265K |
| 280. | IHB100T480512 | 100 watt triple output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage: V1 +-5.1VDC, V2 +-12VDC, V3 +-12VDC; rated max.output current I1 +-20A, I2 +-4.2A, I3 +-4.2A. | CANDD | - | 12 | -40°C | 100°C | 265K |
| 281. | T10A100T | T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 90V,max. Ir = 50uA @ Vr = 100V,max, Tape and reeled (1500pcs). | LIFUS | - | 2 | -40°C | 150°C | 68K |
