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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 70 Displaying: 21 - 40| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 21. | ED1004CS | DPAK surfase mount super fast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current (Tc=75degC) 10.0A. | PAJIT | TO-252 | 4 | -55°C | 150°C | 34K | | 22. | ED1004CS | 400V, 10A DPAK surface mount super fast rectifier | WTE | DPAK | 3 | -65°C | 150°C | 49K | | 23. | ED1004CS | 400V, 10A DPAK surface mount super fast rectifier | WTE | DPAK | 3 | -65°C | 150°C | 49K | | 24. | ED1004CT | Super fast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current (Tc=75degC) 10.0A. | PAJIT | TO-251AB | 4 | -55°C | 150°C | 35K | | 25. | ER1004CT | Superfast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current (Tc=100degC) 10.0A. | PAJIT | - | 3 | -55°C | 150°C | 57K | | 26. | ER1004CT | 400V, 10A super fast glass passivated rectifier | WTE | TO-220 | 3 | -65°C | 150°C | 49K | | 27. | ER1004CT | 400V, 10A super fast glass passivated rectifier | WTE | TO-220 | 3 | -65°C | 150°C | 49K | | 28. | KM416C1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms | SMSNG | SOJ | 42 | 0°C | 70°C | 804K | | 29. | KM416C1004CJ-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | SMSNG | SOJ | 42 | 0°C | 70°C | 804K | | 30. | KM416C1004CJ-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | SMSNG | SOJ | 42 | 0°C | 70°C | 804K | | 31. | KM416C1004CJL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | SMSNG | SOJ | 42 | 0°C | 70°C | 804K | | 32. | KM416C1004CJL-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | SMSNG | SOJ | 42 | 0°C | 70°C | 804K | | 33. | KM416C1004CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms | SMSNG | TSOP | 44 | 0°C | 70°C | 804K | | 34. | KM416C1004CT-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | SMSNG | TSOP | 44 | 0°C | 70°C | 804K | | 35. | KM416C1004CT-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | SMSNG | TSOP | 44 | 0°C | 70°C | 804K | | 36. | KM416C1004CTL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | SMSNG | TSOP | 44 | 0°C | 70°C | 804K | | 37. | KM416C1004CTL-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | SMSNG | TSOP | 44 | 0°C | 70°C | 804K | | 38. | KM416V1004CJL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh | SMSNG | SOJ | 42 | 0°C | 70°C | 804K | | 39. | UF1004CT | Reverse voltage: 400.00V; 10A ultrafast glass passivated rectifier | WTE | TO-220 | 3 | -65°C | 150°C | 48K | | 40. | UF1004CT | Reverse voltage: 400.00V; 10A ultrafast glass passivated rectifier | WTE | TO-220 | 3 | -65°C | 150°C | 48K |
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