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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 301. | 2690-1001 | 1-2 GHz, coaxial limiter | MACOM | - | 2 | -55°C | 85°C | 195K |
| 302. | F1001 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 303. | F1001C | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 33K |
| 304. | GMS77C1001 | EPROM programming/verify specification | HYNIX | PDIP | 18 | - | - | 271K |
| 305. | GMS77C1001 | EPROM programming/verify specification | HYNIX | SOIC | 18 | - | - | 271K |
| 306. | GMS77C1001 | EPROM programming/verify specification | HYNIX | SSOP | 20 | - | - | 271K |
| 307. | MT5C1001DCJ-20L/883C | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 308. | MT5C1001DCJ-20L/IT | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -40°C | 85°C | 166K |
| 309. | MT5C1001DCJ-20L/XT | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 310. | MT5C1001DCJ-25L/883C | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 311. | MT5C1001DCJ-25L/XT | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 312. | MT5C1001DCJ-35L/883C | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 313. | MT5C1001DCJ-35L/XT | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 314. | MT5C1001DCJ-40L/883C | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 315. | MT5C1001DCJ-40L/XT | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 316. | MT5C1001DCJ-55L/883C | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 317. | MT5C1001DCJ-55L/XT | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 318. | MT5C1001DCJ-70L/883C | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 319. | MT5C1001DCJ-70L/XT | 1 meg x 4 SRAM memory array | AUSTN | SOJ | 32 | -55°C | 125°C | 166K |
| 320. | RS1001M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 10A at Tc=100degC. | RECTR | RS-10M | 4 | -55°C | 150°C | 30K |
