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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 8561. | 1.5KE100A | 85.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 8562. | 15KP100A | 100V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | MDE | P-600 | 2 | -55°C | 175°C | 164K |
| 8563. | 15KW100A | 100.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | MDE | P-600 | 2 | -55°C | 175°C | 166K |
| 8564. | 5KP100A | 100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE | P-600 | 2 | -55°C | 175°C | 647K |
| 8565. | KM416C4100BS-45 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 45ns | SMSNG | TSOP(II) | 50 | 0°C | 70°C | 826K |
| 8566. | KM416C4100BS-5 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns | SMSNG | TSOP(II) | 50 | 0°C | 70°C | 826K |
| 8567. | KM416C4100BS-6 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns | SMSNG | TSOP(II) | 50 | 0°C | 70°C | 826K |
| 8568. | KM416C4100BS-6 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns | SMSNG | TSOP(II) | 50 | 0°C | 70°C | 826K |
| 8569. | MAX20-100.0C | 100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | - | - | - | 810K |
| 8570. | MAX20-100.0CA | 100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | - | - | - | 810K |
| 8571. | MAX40-100.0C | 100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | - | - | 810K |
| 8572. | MAX40-100.0CA | 100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | - | - | 810K |
| 8573. | P4KE100A | 85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 8574. | P6KE100A | 85.50V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
| 8575. | SA100A | 100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 8576. | SMAJ100A | 100.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | MDE | DO-214AC | 2 | -55°C | 150°C | 780K |
| 8577. | SMBJ100A | 100.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | MDE | DO-214AA | 2 | -55°C | 150°C | 582K |
| 8578. | SMCJ100A | 100.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | MDE | DO-214AB | 2 | -55°C | 150°C | 607K |
| 8579. | SMDJ100A | 100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | MDE | DO-214AB | 2 | -55°C | 150°C | 588K |
| 8580. | SMLJ100A | 100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | MDE | DO-214AB | 2 | -55°C | 150°C | 588K |
