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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 5961. | P4FMAJ100A | GPP transient voltage suppressor. Breakdown voltage 95.0V to 105V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 5962. | P4FMAJ100A | GPP transient voltage suppressor. Breakdown voltage 95.0V to 105V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 5963. | P4KE100A | GPP transient voltage suppressor. Breakdown voltage 95.0V to 105V. 400W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | - | 2 | -65°C | 175°C | 1M |
| 5964. | P6FMBJ100A | GPP transient voltage suppressor. Breakdown voltage 95.0V to 105V. 600W peak power, 1.0W steady stat. For bidirectional use CA suffix | RECTR | DO-214AA | 2 | -55°C | 150°C | 1M |
| 5965. | P6KE100A | GPP transient voltage suppressor. Breakdown voltage 95.0V to 105V. 600W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-15 | 2 | -65°C | 175°C | 1M |
| 5966. | RS1005M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V, max RMS voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 10A at Tc=100degC. | RECTR | RS-10M | 4 | -55°C | 150°C | 30K |
| 5967. | RS1006M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 10A at Tc=100degC. | RECTR | RS-10M | 4 | -55°C | 150°C | 30K |
| 5968. | RS1007M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS voltage700V, max DC blocking voltage 1000V. Max average forward rectified current 10A at Tc=100degC. | RECTR | RS-10M | 4 | -55°C | 150°C | 30K |
| 5969. | TFMAJ100A | GPP transient voltage suppressor. Breakdown voltage 110V to 123V. 400W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-214AC | 2 | -55°C | 150°C | 989K |
| 5970. | TFMBJ100A | GPP transient voltage suppressor. Breakdown voltage 110V to 123V. 600W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-214AA | 2 | -55°C | 150°C | -- |
| 5971. | TFMCJ100A | GPP transient voltage suppressor. Breakdown voltage 110V to 123V. 1500W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-214AB | 2 | -55°C | 150°C | -- |
| 5972. | UT62L12916BS-100L | Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM | UTRON | BGA | 48 | 0°C | 70°C | 234K |
| 5973. | UT62L12916BS-100LI | Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM | UTRON | BGA | 48 | -40°C | 85°C | 234K |
| 5974. | UT62L12916BS-100LL | Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM | UTRON | BGA | 48 | 0°C | 70°C | 234K |
| 5975. | UT62L12916BS-100LLI | Access time: 100 ns, 128 K x 16 Bit low power CMOS SRAM | UTRON | BGA | 48 | -40°C | 85°C | 234K |
| 5976. | UT62L5128LC-100LLI | Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM | UTRON | TSOP | 32 | -40°C | 85°C | 195K |
| 5977. | UT62L5128LS-100LI | Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM | UTRON | STSOP | 32 | -40°C | 85°C | 195K |
| 5978. | UT62L5128LS-100LLI | Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM | UTRON | STSOP | 32 | -40°C | 85°C | 195K |
| 5979. | UT62L5128SC-100LI | Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM | UTRON | SOP | 32 | -40°C | 85°C | 195K |
| 5980. | UT62L5128SC-100LLI | Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM | UTRON | SOP | 32 | -40°C | 85°C | 195K |
