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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 831      Displaying: 21 - 40
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
1MB10-120Fuji discrete package IGBT
FUJI
-
3
-
-
226K
22.
1N4110-1Zener Voltage Regulator Diode
MSEMI
DO-35
-
-
-
86K
23.
BYM10-100Surface Mount Glass Passivated Junction Rectifier
GE
DO-213AB
-
-
-
62K
24.
BYM10-1000Surface Mount Glass Passivated Junction Rectifier
GE
DO-213AB
-
-
-
62K
25.
CS52510-1GT510A LDO 5-pin adjustible linear regulator
CHERY
5L TO-220 Straight
5
0°C
150°C
154K
26.
ERW10-120Silicon diode
FUJI
TO-220AC
2
-
-
145K
27.
HF10-12FNPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
18K
28.
HF10-12SNPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
17K
29.
IR2110-1High and low side driver
IRF
DIP
14
0°C
150°C
543K
30.
MIC2010-1CQSUSB Power Controller
MICRL
QSOP
16
-
-
51K
31.
MIC2010-1PCQSUSB Power Controller
MICRL
QSOP
16
-
-
51K
32.
MLL4110-1Zener Voltage Regulator Diode
MSEMI
DO-213AA
-
-
-
83K
33.
VHB10-12FNPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
17K
34.
VHB10-12SNPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
16K
35.
VLB10-12FNPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
17K
36.
VLB10-12SNPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
16K
37.
VMB10-12FNPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
17K
38.
VMB10-12SNPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
16K
39.
W27C010-1564K*8 bits high speed, low power electrically erasable EPROM
WBOND
P-DIP32
32
-
-
169K
40.
W27E010-12128K*8 bits high speed, low power electrically erasable EPROM
WBOND
P-DIP32
32
0°C
70°C
194K
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