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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 2001-6151-02 | DC-4 GHz, SMA termination | MACOM | - | - | -54°C | 125°C | 168K |
| 42. | 2021-1311-02 | Short circuits and dust caps | MACOM | - | - | - | - | 150K |
| 43. | 2082-6191-02 | 2 Watt, DC-18 GHz, Fixed coaxial attenuator | MACOM | - | - | -55°C | 125°C | 226K |
| 44. | BAP51-02 | 60 V, general purpose PIN diode | LRC | SOD | 2 | -65°C | 150°C | 105K |
| 45. | C5331-02 | Frequency bandwidth: 4k to 100M Hz; operates an APD with single 5V supply | HAMAM | - | - | 0°C | 60°C | 273K |
| 46. | CF001-02 | 1.2 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip | CELER | - | - | - | - | 585K |
| 47. | D01-02A3R | Isolation:3000 VDC; input/output voltage:5/12 VDC; output current:84 mA; 1 W DC to DC converter | FRAN | SIL | 6 | -25°C | 71°C | 51K |
| 48. | D01-02AR | Isolation:1000 VDC; input/output voltage:5/12 VDC; output current:84 mA; 1 W DC to DC converter | FRAN | SIL | 6 | -25°C | 71°C | 51K |
| 49. | DSEI2X121-02A | 200V fast recovery epitaxial diode (FRED) | IXYS | SOT-227B | 4 | -40°C | 150°C | 63K |
| 50. | DSEI2X121-02P | 200V fast recovery epitaxial diode (FRED) | IXYS | - | 12 | -40°C | 150°C | 108K |
| 51. | DSEI2X61-02A | 200V fast recovery epitaxial diode (FRED) | IXYS | SOT-227B | 4 | -40°C | 150°C | 65K |
| 52. | G7751-02 | Active area: 2mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection | HAMAM | - | - | 0°C | 40°C | 103K |
| 53. | G7871-02 | Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH | HAMAM | - | 4 | -40°C | 85°C | 108K |
| 54. | G8341-02 | Supply voltage:0.3-3.8V; InGaAs PIN photodiode with preamp: 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH | HAMAM | - | 4 | -40°C | 85°C | 108K |
| 55. | G8941-02 | reverse voltage: 20V; active area: 0.5mm; InGaAs PIN photodiode: sub-mount type photodiode for LD monitor. For LD monitor | HAMAM | - | - | -40°C | 85°C | 139K |
| 56. | L2481-02 | 75W; super-quiet mercury-xenon lamp: deep UV light source for precision measurement | HAMAM | - | - | - | - | 1M |
| 57. | MIE-134A1-02 | GaAs infrared emitting diode | UOT | plastic | 3 | -55°C | 100°C | 38K |
| 58. | SMS3931-021 | Surface mount schottky quad mixer diode | ALPHA | SOT | 4 | -65°C | 150°C | 442K |
| 59. | STK401-020 | 2-channel, 15+15W AF power amplifier (split power supply) | SANYO | SIP | 16 | -30°C | 125°C | 184K |
