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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1821. | EN29F040-45JI | 4 Megabit (512K x 8-bit) flach memory. Speed 45ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | -40°C | 85°C | 223K |
| 1822. | EN29F040-45PI | 4 Megabit (512K x 8-bit) flach memory. Speed 45ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | -40°C | 85°C | 223K |
| 1823. | EN29F040-45T | 4 Megabit (512K x 8-bit) flach memory. Speed 45ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | 0°C | 70°C | 223K |
| 1824. | EN29F040-45TI | 4 Megabit (512K x 8-bit) flach memory. Speed 45ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | -40°C | 85°C | 223K |
| 1825. | EN29F040-55J | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | 0°C | 70°C | 223K |
| 1826. | EN29F040-55JI | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | -40°C | 85°C | 223K |
| 1827. | EN29F040-55PI | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | -40°C | 85°C | 223K |
| 1828. | EN29F040-55T | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | 0°C | 70°C | 223K |
| 1829. | EN29F040-55TI | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | -40°C | 85°C | 223K |
| 1830. | EN29F040-70J | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | 0°C | 70°C | 223K |
| 1831. | EN29F040-70JI | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | -40°C | 85°C | 223K |
| 1832. | EN29F040-70PI | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | -40°C | 85°C | 223K |
| 1833. | EN29F040-70T | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | 0°C | 70°C | 223K |
| 1834. | EN29F040-70TI | 4 Megabit (512K x 8-bit) flach memory. Speed 70ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | -40°C | 85°C | 223K |
| 1835. | EN29F040-90J | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | 0°C | 70°C | 223K |
| 1836. | EN29F040-90JI | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | PLCC | 32 | -40°C | 85°C | 223K |
| 1837. | EN29F040-90PI | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | PDIP | 32 | -40°C | 85°C | 223K |
| 1838. | EN29F040-90T | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | 0°C | 70°C | 223K |
| 1839. | EN29F040-90TI | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | EON | TSOP | 32 | -40°C | 85°C | 223K |
| 1840. | OHN3040U | Hallogic hall effect sensor | OPTEK | Silicon chip | 3 | -20°C | 85°C | 287K |
