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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 421. | 24LC02N8 | 2048-bits serial EEPROM with write protect | CRMT | PDIP | 8 | 0°C | 70°C | 201K |
| 422. | AF002N2-32 | GaAs IC 15dB voltage variable attenuator single control DC-2 GHz | ALPHA | SOT | 4 | -40°C | 85°C | 22K |
| 423. | AFP02N8-000 | General purpose PHEMT chip | ALPHA | - | - | -65°C | 150°C | 23K |
| 424. | AFP02N8-212 | General purpose PHEMT chip | ALPHA | - | - | -65°C | 150°C | 30K |
| 425. | AFP02N8-213 | General purpose PHEMT chip | ALPHA | - | - | -65°C | 150°C | 30K |
| 426. | AT002N5-00 | GaAs 50 dB IC voltage variable dual control attenuator DC-3 GHz | ALPHA | - | - | -55°C | 125°C | 134K |
| 427. | AT002N5-00 | GaAs 50 dB IC voltage variable dual control attenuator DC-3 GHz | ALPHA | - | - | -55°C | 125°C | 134K |
| 428. | AT002N5-01 | GaAs 50 dB IC voltage variable dual control attenuator DC-3 GHz | ALPHA | - | 7 | -55°C | 125°C | 40K |
| 429. | AT002N5-10 | GaAs 50 dB IC voltage variable dual control attenuator DC-3 GHz | ALPHA | - | 7 | -55°C | 125°C | 40K |
| 430. | AT002N5-11 | GaAs 50 dB IC voltage variable dual control attenuator DC-3 GHz | ALPHA | Surface mount | 8 | -55°C | 125°C | 46K |
| 431. | HSH1002NEO | Lamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max). | PERK | - | 2 | - | - | 46K |
| 432. | HSH1002NILO | Lamp for photolithography. Iding mode power 700 watts, current 27 amps(DC), voltage 26 volts(DC). Flash mode power 1000 watts, current 36 amps(DC), voltage 28 volts(DC). Temperature(at base) 220degC(max). | PERK | - | 2 | - | - | 46K |
| 433. | HSH2002NIEO | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | PERK | - | 2 | - | - | 43K |
| 434. | HV302NG | 35-65V sequencing hotswap controller | SUTEX | SOIC | 14 | -40°C | 85°C | 618K |
| 435. | IXTP02N50D | 500V high voltage MOSFET | IXYS | TO-220AD | 3 | -55°C | 150°C | 54K |
| 436. | NV302N12 | 3000 V miniature hybrid multiplier, 10nA output current | VMI | - | - | -55°C | 100°C | 552K |
| 437. | NV302N12S | 3000 V miniature hybrid multiplier, 10nA output current | VMI | - | - | -55°C | 100°C | 552K |
| 438. | TN0702N3 | 20V N-channel enhancement-mode vertical DMOS FET | SUTEX | - | 3 | -55°C | 150°C | 476K |
| 439. | TP2502N8 | 20V P-channel enhancement-mode vertical DMOS FET | SUTEX | TO-243AA | 3 | -55°C | 150°C | 455K |
| 440. | TP2502ND | 20V P-channel enhancement-mode vertical DMOS FET | SUTEX | Die | 3 | -55°C | 150°C | 455K |
