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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 2101. | APT5010B2FLL | 500V, 46A power MOS 7 transistor | ADPOW | TO-264 | 3 | -55°C | 150°C | 63K |
| 2102. | APT5010B2VR | 500V, 47A power MOS V transistor | ADPOW | TO-247 | 3 | -55°C | 150°C | 61K |
| 2103. | APT5010JLC | 500V, 44A power MOS VI transistor | ADPOW | SOT-227 | 3 | -55°C | 150°C | 35K |
| 2104. | APT5010JN | 500V, 48A power MOS IV transistor | ADPOW | SOT-227 | 3 | -55°C | 150°C | 60K |
| 2105. | APT5010JVFR | 500V, 44A power MOS V transistor | ADPOW | SOT-227 | 3 | -55°C | 150°C | 73K |
| 2106. | APT5010JVR | 500V, 44A power MOS V transistor | ADPOW | SOT-227 | 3 | -55°C | 150°C | 71K |
| 2107. | APT5010JVRU2 | 500V, 44A power MOS V transistor | ADPOW | SOT-227 | 3 | -55°C | 150°C | 110K |
| 2108. | APT5010JVRU3 | 500V, 44A power MOS V transistor | ADPOW | SOT-227 | 3 | -55°C | 150°C | 111K |
| 2109. | APT5010LFLL | 500V, 46A power MOS 7 transistor | ADPOW | TO-264 | 3 | -55°C | 150°C | 63K |
| 2110. | APT5010LLC | 500V, 47A power MOS VI transistor | ADPOW | TO-264 | 3 | -55°C | 150°C | 66K |
| 2111. | APT5010LVFR | 500V, 47A power MOS V transistor | ADPOW | TO-264 | 3 | -55°C | 150°C | 66K |
| 2112. | APT5010LVR | 500V, 47A power MOS V transistor | ADPOW | TO-264 | 3 | -55°C | 150°C | 64K |
| 2113. | ELH0101AK/883B | Power operational amplifier | ELANT | TO | 3 | -55°C | 125°C | 326K |
| 2114. | ELH0101K/883B | Power operational amplifier | ELANT | TO | 3 | -55°C | 125°C | 326K |
| 2115. | ELH0101K/883B | Power operational amplifier | ELANT | TO | 3 | -55°C | 125°C | 326K |
| 2116. | MT2010A-UG | Visible LED. Color sensor. Paper sensor. Bar code reader. Peak emission wavelength 574 nm. | MRKTE | - | 2 | -20°C | 85°C | 207K |
| 2117. | MT2010A-UY | Visible LED. Color sensor. Paper sensor. Bar code reader. Peak emission wavelength 590 nm. | MRKTE | - | 2 | -20°C | 85°C | 208K |
| 2118. | MTD3010PM | Photo diode. Peak sensitivity wavelength 950 nm. | MRKTE | Metal Can | 2 | -30°C | 85°C | 170K |
| 2119. | MTD5010M | Ultra high speed photo diode. Peak sensivity wavelength 850 nm. | MRKTE | Metal Can | 2 | -30°C | 100°C | 168K |
| 2120. | Si5010-BM | OC-12/3, STM-4/1 SONET/SDH clock and data recovery IC. | SILAB | MLP | 20 | -40°C | 85°C | 287K |
