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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 840 Displaying: 601 - 620| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 601. | 3EZ200D5 | 200 V, 3 W, silicon zener diode | EIC | - | 2 | -55°C | 175°C | 37K | | 602. | 3EZ300D5 | 300 V, 3 W, silicon zener diode | EIC | - | 2 | -55°C | 175°C | 37K | | 603. | 3EZ400D5 | 400 V, 3 W, silicon zener diode | EIC | - | 2 | -55°C | 175°C | 37K | | 604. | SB10100DC | DDPak surfase schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 100degC 10 A. | PAJIT | TO-263 | 3 | -50°C | 125°C | 46K | | 605. | SB16100DC | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 90degC 16.0 A. | PAJIT | TO-263 | 3 | -50°C | 150°C | 56K | | 606. | SB8100DC | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Ta = 100degC 8 A. | PAJIT | TO-263 | 4 | -50°C | 150°C | 46K | | 607. | TMS44400DGA-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 5V | TI | TSOP | 20 | 0°C | 70°C | 657K | | 608. | TMS44400DGA-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 5V | TI | TSOP | 20 | 0°C | 70°C | 657K | | 609. | TMS44400DGA-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 5V | TI | TSOP | 20 | 0°C | 70°C | 657K | | 610. | TMS44400DGA-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 5V | TI | TSOP | 20 | 0°C | 70°C | 657K | | 611. | TMS44400DJ-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 5.0V | TI | SOJ | 20 | 0°C | 70°C | 657K | | 612. | TMS44400DJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 5.0V | TI | SOJ | 20 | 0°C | 70°C | 657K | | 613. | TMS44400DJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 5.0V | TI | SOJ | 20 | 0°C | 70°C | 657K | | 614. | TMS46400DGA-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 3.3V, low power | TI | TSOP | 20 | 0°C | 70°C | 657K | | 615. | TMS46400DGA-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 3.3V, low power | TI | TSOP | 20 | 0°C | 70°C | 657K | | 616. | TMS46400DGA-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, low power | TI | TSOP | 20 | 0°C | 70°C | 657K | | 617. | TMS46400DGA-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, low power | TI | TSOP | 20 | 0°C | 70°C | 657K | | 618. | TMS46400DJ-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 3.3V, low power | TI | SOJ | 20 | 0°C | 70°C | 657K | | 619. | TMS46400DJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 3.3V, low power | TI | SOJ | 20 | 0°C | 70°C | 657K | | 620. | TMS46400DJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, low power | TI | SOJ | 20 | 0°C | 70°C | 657K |
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