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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 43 Displaying: 21 - 40| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 21. | CMPD2003C | 200 V, High voltage switching diode | CENTR | SOT-23 | 3 | -65°C | 150°C | 110K | | 22. | ED1003CS | DPAK surfase mount super fast recovery rectifier. Max recurrent peak reverse voltage 300V. Max average forward rectified current (Tc=75degC) 10.0A. | PAJIT | TO-252 | 4 | -55°C | 150°C | 34K | | 23. | ED1003CS | 300V, 10A DPAK surface mount super fast rectifier | WTE | DPAK | 3 | -65°C | 150°C | 49K | | 24. | ED1003CS | 300V, 10A DPAK surface mount super fast rectifier | WTE | DPAK | 3 | -65°C | 150°C | 49K | | 25. | ED1003CT | Super fast recovery rectifier. Max recurrent peak reverse voltage 300V. Max average forward rectified current (Tc=75degC) 10.0A. | PAJIT | TO-251AB | 4 | -55°C | 150°C | 35K | | 26. | ER1003CT | Superfast recovery rectifier. Max recurrent peak reverse voltage 300V. Max average forward rectified current (Tc=100degC) 10.0A. | PAJIT | - | 3 | -55°C | 150°C | 57K | | 27. | HER3003C | High efficiency rectifier. Max recurrent peak reverse voltage 200V, max RMS voltage 140V, max DC blocking voltage 200V. Max average forward recttified current 30.0A at 75degreC. | RECTR | TO-247 | 3 | -65°C | 150°C | 26K | | 28. | HMBD2003C | 250V diode | HSMC | SOT23 | 3 | - | - | 19K | | 29. | KM44C4003CK-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | SMSNG | SOJ | 28 | 0°C | 70°C | 376K | | 30. | KM44C4003CK-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | SMSNG | SOJ | 28 | 0°C | 70°C | 376K | | 31. | KM44C4003CKL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | SMSNG | SOJ | 28 | 0°C | 70°C | 376K | | 32. | KM44C4003CKL-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | SMSNG | SOJ | 28 | 0°C | 70°C | 376K | | 33. | KM44C4003CS-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | SMSNG | TSOP II | 28 | 0°C | 70°C | 376K | | 34. | KM44C4003CS-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | SMSNG | TSOP II | 28 | 0°C | 70°C | 376K | | 35. | KM44C4003CS-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | SMSNG | TSOP II | 28 | 0°C | 70°C | 376K | | 36. | KM44C4003CSL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | SMSNG | TSOP II | 28 | 0°C | 70°C | 376K | | 37. | KM44C4003CSL-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | SMSNG | TSOP II | 28 | 0°C | 70°C | 376K | | 38. | PJ13003CT | Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor | PROMX | TO-220 | 3 | -20°C | 85°C | 153K | | 39. | UF1003CT | Reverse voltage: 300.00V; 10A ultrafast glass passivated rectifier | WTE | TO-220 | 3 | -65°C | 150°C | 48K | | 40. | UF1003CT | Reverse voltage: 300.00V; 10A ultrafast glass passivated rectifier | WTE | TO-220 | 3 | -65°C | 150°C | 48K |
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