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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1161. | 1N4003G | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. | JGD | - | 2 | -65°C | 150°C | 135K |
| 1162. | 1N4003G | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. | JGD | A-405 | 2 | -65°C | 150°C | 135K |
| 1163. | 1N4003L | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. | JGD | - | 2 | -65°C | 150°C | 135K |
| 1164. | 1N4003L | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. | JGD | - | 2 | -65°C | 150°C | 135K |
| 1165. | 1N4003L | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. | JGD | A-405 | 2 | -65°C | 150°C | 135K |
| 1166. | 5962R9858003QXC | RadHard schmitt CMOS 16-bit bidirectional multipurpose transceiver: SMD. Total dose 1E5 rad(Si). Class Q. Lead finish gold. | UTMC | FlatPack | 48 | -40°C | 125°C | 97K |
| 1167. | 5962R9858003VXC | RadHard schmitt CMOS 16-bit bidirectional multipurpose transceiver: SMD. Total dose 1E5 rad(Si). Class V. Lead finish gold. | UTMC | FlatPack | 48 | -40°C | 125°C | 97K |
| 1168. | 5962R9858003VXC | RadHard schmitt CMOS 16-bit bidirectional multipurpose transceiver: SMD. Total dose 1E5 rad(Si). Class V. Lead finish gold. | UTMC | FlatPack | 48 | -40°C | 125°C | 97K |
| 1169. | APU4003T | 4-bit micro-controller with EPROM, 1 K word | APLUS | PLCC | 68 | 0°C | 70°C | 339K |
| 1170. | CF003-03 | 1.0 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip | CELER | - | - | - | - | 582K |
| 1171. | CMM6003-SC | 50 MHz to 870 MHz high dynamic range amplifier | CELER | SOT | 4 | -40°C | 85°C | 703K |
| 1172. | LEF-C5003D | Full color LED lamp. Emmitted color: super red, super green, super blue. | LETEX | bulk | 4 | -20°C | 80°C | 60K |
| 1173. | PB-CMM6003-SC | 50 MHz to 870 MHz high dynamic range amplifier | CELER | - | - | -40°C | 85°C | 703K |
| 1174. | UF4003G | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. | JGD | - | 2 | -65°C | 150°C | 164K |
| 1175. | ULN2003A | Seven darlington arrays | STM | DIP | 16 | -20°C | 85°C | 326K |
| 1176. | ULN2003AD | High-voltage high-current darlington transistor arrays | TI | SO | 8 | -20°C | 85°C | 168K |
| 1177. | ULN2003AN | High-voltage high-current darlington transistor arrays | TI | DIP | 8 | -20°C | 85°C | 168K |
| 1178. | ULN2003D | Seven darlington arrays | STM | SO | 16 | -20°C | 85°C | 326K |
| 1179. | ULQ2003AD | High-voltage high-current darlington transistor arrays | TI | SO | 8 | -40°C | 85°C | 168K |
| 1180. | ULQ2003AN | High-voltage high-current darlington transistor arrays | TI | DIP | 8 | -40°C | 85°C | 168K |
