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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 3068      Displaying: 1741 - 1760
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1741.
DSSK48-0025B25V power schottky rectifier with common cathode
IXYS
-
3
-55°C
150°C
136K
1742.
DSSK80-0025B25V power schottky rectifier with common cathode
IXYS
TO-247AD
3
-55°C
150°C
68K
1743.
HSH1002CEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
45K
1744.
HSH1002GEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
47K
1745.
HSH1002NEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
46K
1746.
HSH1002NILOLamp for photolithography. Iding mode power 700 watts, current 27 amps(DC), voltage 26 volts(DC). Flash mode power 1000 watts, current 36 amps(DC), voltage 28 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
46K
1747.
HSH1002UEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
46K
1748.
HSH2002NIEOLamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
43K
1749.
IW4002BDDual 4-input NOR gate, high-voltage silicon-gate CMOS
INTGR
SOIC
14
-55°C
125°C
108K
1750.
IW4002BNDual 4-input NOR gate, high-voltage silicon-gate CMOS
INTGR
Plastic DIP
14
-55°C
125°C
108K
1751.
IW4002BNDual 4-input NOR gate, high-voltage silicon-gate CMOS
INTGR
Plastic DIP
14
-55°C
125°C
108K
1752.
MT28F002B3VG-10BET256K x 8; 3V only, dual supply, smart 3 boot block flash memory
MICRN
SOP
44
0°C
70°C
558K
1753.
MT28F002B3VG-10TET256K x 8; 3V only, dual supply, smart 3 boot block flash memory
MICRN
SOP
44
0°C
70°C
558K
1754.
MT28F002B3VG-9B256K x 8; 3V only, dual supply, smart 3 boot block flash memory
MICRN
SOP
44
0°C
70°C
558K
1755.
MT28F002B3VG-9T256K x 8; 3V only, dual supply, smart 3 boot block flash memory
MICRN
SOP
44
0°C
70°C
558K
1756.
MT28F002B5VG-6B256K x 8; 5V only, dual supply, smart 5 boot block flash memory
MICRN
TSOP
40
0°C
70°C
575K
1757.
MT28F002B5VG-8B256K x 8; 5V only, dual supply, smart 5 boot block flash memory
MICRN
TSOP
40
0°C
70°C
575K
1758.
MT28F002B5VG-8BET256K x 8; 5V only, dual supply, smart 5 boot block flash memory
MICRN
TSOP
40
0°C
70°C
575K
1759.
MT28F002B5VG-8T256K x 8; 5V only, dual supply, smart 5 boot block flash memory
MICRN
TSOP
40
0°C
70°C
575K
1760.
MT28F002B5VG-8TET256K x 8; 5V only, dual supply, smart 5 boot block flash memory
MICRN
TSOP
40
0°C
70°C
575K
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