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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1221. | 1N4002G | Glass passivated rectifier | DCCOM | - | 2 | -65°C | 175°C | 399K |
1222. | AV2002V | Wavedec digital audio codec | ICST | PLCC | 44 | 0°C | 70°C | 550K |
1223. | AV2002Y | Wavedec digital audio codec | ICST | TQFP | 44 | 0°C | 70°C | 550K |
1224. | ICS2002V | Wavedec digital audio codec | ICST | PLCC | 44 | 0°C | 70°C | 550K |
1225. | IN4002A | 1.0 mA silicon rectifier | DCCOM | A-405 | 2 | -65°C | 175°C | 377K |
1226. | IS41C44002-50J | 5V 4M x 4(16-MBIT) dynamic RAM with edo page mode | ISSI | SOJ | 24 | 0°C | 70°C | 157K |
1227. | IS41C44002-50JI | 5V 4M x 4(16-MBIT) dynamic RAM with edo page mode | ISSI | SOJ | 24 | -40°C | 85°C | 157K |
1228. | IS41C44002-60J | 5V 4M x 4(16-MBIT) dynamic RAM with edo page mode | ISSI | SOJ | 24 | 0°C | 70°C | 157K |
1229. | IS41LV44002-50J | 3.3V 4M x 4(16-MBIT) dynamic RAM with edo page mode | ISSI | SOJ | 24 | 0°C | 70°C | 157K |
1230. | IS41LV44002-50JI | 3.3V 4M x 4(16-MBIT) dynamic RAM with edo page mode | ISSI | SOJ | 24 | -40°C | 85°C | 157K |
1231. | IS41LV44002-60J | 3.3V 4M x 4(16-MBIT) dynamic RAM with edo page mode | ISSI | SOJ | 24 | 0°C | 70°C | 157K |
1232. | IS41LV44002-60JI | 3.3V 4M x 4(16-MBIT) dynamic RAM with edo page mode | ISSI | SOJ | 24 | -40°C | 85°C | 157K |
1233. | MAX1002CAX | Low-power, 60Msps, dual, 6-bit ADC | MAXIM | SSOP | 36 | 0°C | 70°C | 106K |
1234. | MAX6002EUR-T | Low-cost, low-power, low-dropout, voltage reference. Output voltage 2.500V, input voltage (Vout+200mV) to 12.6V. | MAXIM | SOT23-3 | 3 | -40°C | 85°C | 195K |
1235. | MJ10020 | 60A NPN silicon power darlington transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 211K |
1236. | MJ10021 | 60A NPN silicon power darlington transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 211K |
1237. | MJ10022 | 40A NPN silicon power darlington transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 202K |
1238. | MJ10023 | 40A NPN silicon power darlington transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 202K |
1239. | MJ10024 | 20A NPN silicon power darlington transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 205K |
1240. | MJ10025 | 20A NPN silicon power darlington transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 205K |